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Despite more than two decades of intensive research, ion implantation in group III nitrides is still not established as a routine technique for doping and device processing. The main challenges to overcome are the complex defect accumulation processes, as well as the high post-implant annealing temperatures necessary for efficient dopant activation. This review summarises the contents of a plenary talk, given at the Applied Nuclear Physics Conference, Prague, 2021, and focuses on recent results, obtained at Instituto Superior Técnico (Lisbon, Portugal), on ion implantation into non-conventional GaN structures, such as non-polar thin films and nanowires. Interestingly, the damage accumulation is strongly influenced by the surface orientation of the samples, as well as their dimensionality. In particular, basal stacking faults are the dominant implantation defects in c-plane GaN films, while dislocation loops predominate in a-plane samples. Ion implantation into GaN nanowires, on the other hand, causes a much smaller density of extended defects compared to thin films. Finally, recent breakthroughs concerning dopant activation are briefly reviewed, focussing on optical doping with europium and electrical doping with magnesium. [ABSTRACT FROM AUTHOR]