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Photodetectors play a critical role in space lidars designed for scientific investigations from orbit around planetary bodies. The detectors must be highly sensitive due to the long range of measurements and tight constraints on the size, weight, and power of the instrument. The detectors must also be space radiation tolerant over multi-year mission lifetimes with no significant performance degradation. Early space lidars used diode-pumped Nd:YAG lasers with a single beam for range and atmospheric backscattering measurements at 1064 nm or its frequency harmonics. The photodetectors used were single-element photomultiplier tubes and infrared performance-enhanced silicon avalanche photodiodes. Space lidars have advanced to multiple beams for surface topographic mapping and active infrared spectroscopic measurements of atmospheric species and surface composition, which demand increased performance and new capabilities for lidar detectors. Higher sensitivity detectors are required so that multi-beam and multi-wavelength measurements can be performed without increasing the laser and instrument power. Pixelated photodetectors are needed so that a single detector assembly can be used for simultaneous multi-channel measurements. Photon-counting photodetectors are needed for active spectroscopy measurements from short-wave infrared to mid-wave infrared. HgCdTe avalanche photodiode arrays have emerged recently as a promising technology to fill these needs. This paper gives a review of the photodetectors used in past and present lidars and the development and outlook of HgCdTe APD arrays for future space lidars. [ABSTRACT FROM AUTHOR]

Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5–0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD. [ABSTRACT FROM AUTHOR]

Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes. [ABSTRACT FROM AUTHOR]

Free-running InGaAs/InP single-photon avalanche photodiodes (SPADs) typically operate in the active-quenching mode, facing the problems of long dead time and large timing jitter. In this paper, we demonstrate a 1-GHz gated InGaAs/InP SPAD with the sinusoidal gating signals asynchronous to the incident pulsed laser, enabling free-running single-photon detection. The photon-induced avalanche signals are quenched within 1 ns, efficiently reducing the SPAD's dead time and achieving a count rate of up to 500 Mcount/s. However, the timing jitter is measured to be ~168 ps, much larger than that of the SPAD with synchronous gates. We adjust the delay between the gating signals and the incident pulsed laser to simulate the random arrival of the photons, and record the timing jitter, respectively, to figure out the cause of the jitter deterioration. In addition, the effects of the incident laser power and working temperature of the APD on the time resolution have been investigated, broadening the applications of the GHz gated free-running SPAD in laser ranging and imaging, fluorescence spectroscopy detection and optical time-domain reflectometry. [ABSTRACT FROM AUTHOR]

In hard X-ray applications that require high detection efficiency and short response times, such as synchrotron radiation-based Mössbauer absorption spectroscopy and time-resolved fluorescence or photon beam position monitoring, III–V-compound semiconductors, and dedicated alloys offer some advantages over the Si-based technologies traditionally used in solid-state photodetectors. Amongst them, gallium arsenide (GaAs) is one of the most valuable materials thanks to its unique characteristics. At the same time, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics, such as in the case of a very weak photon flux or when single-photon detection is required. Some GaAs-based avalanche photodiodes (APDs) were grown by a molecular beam epitaxy to fulfill these needs; by means of band gap engineering, we realised devices with separate absorption and multiplication region(s) (SAM), the latter featuring a so-called staircase structure to reduce the multiplication noise. This work reports on the experimental characterisations of gain, noise, and charge collection efficiencies of three series of GaAs APDs featuring different thicknesses of the absorption regions. These devices have been developed to investigate the role of such thicknesses and the presence of traps or defects at the metal–semiconductor interfaces responsible for charge loss, in order to lay the groundwork for the future development of very thick GaAs devices (thicker than 100 μ m) for hard X-rays. Several measurements were carried out on such devices with both lasers and synchrotron light sources, inducing photon absorption with X-ray microbeams at variable and controlled depths. In this way, we verified both the role of the thickness of the absorption region in the collection efficiency and the possibility of using the APDs without reaching the punch-through voltage, thus preventing the noise induced by charge multiplication in the absorption region. These devices, with thicknesses suitable for soft X-ray detection, have also shown good characteristics in terms of internal amplification and reduction of multiplication noise, in line with numerical simulations. [ABSTRACT FROM AUTHOR]

We present an analysis of carrier dynamics of the single-photon detection process, i.e., from Geiger mode pulse generation to its quenching, in a single-photon avalanche diode (SPAD). The device is modeled by a parallel circuit of a SPAD and a capacitance representing both space charge accumulation inside the SPAD and parasitic components. The carrier dynamics inside the SPAD is described by time-dependent bipolar-coupled continuity equations (BCE). Numerical solutions of BCE show that the entire process completes within a few hundreds of picoseconds. More importantly, we find that the total amount of charges stored on the series capacitance gives rise to a voltage swing of the internal bias of SPAD twice of the excess bias voltage with respect to the breakdown voltage. This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. Such operation is demonstrated by experiments with a 6 µm size 400 × 400 pixels SPAD-based CIS designed with this methodology. [ABSTRACT FROM AUTHOR]

Positron emission tomography (PET) imaging is an essential tool in clinical applications for the diagnosis of diseases due to its ability to acquire functional images to help differentiate between metabolic and biological activities at the molecular level. One key limiting factor in the development of efficient and accurate PET systems is the sensor technology in the PET detector. There are generally four types of sensor technologies employed: photomultiplier tubes (PMTs), avalanche photodiodes (APDs), silicon photomultipliers (SiPMs), and cadmium zinc telluride (CZT) detectors. PMTs were widely used for PET applications in the early days due to their excellent performance metrics of high gain, low noise, and fast timing. However, the fragility and bulkiness of the PMT glass tubes, high operating voltage, and sensitivity to magnetic fields ultimately limit this technology for future cost-effective and multi-modal systems. As a result, solid-state photodetectors like the APD, SiPM, and CZT detectors, and their applications for PET systems, have attracted lots of research interest, especially owing to the continual advancements in the semiconductor fabrication process. In this review, we study and discuss the operating principles, key performance parameters, and PET applications for each type of sensor technology with an emphasis on SiPM and CZT detectors—the two most promising types of sensors for future PET systems. We also present the sensor technologies used in commercially available state-of-the-art PET systems. Finally, the strengths and weaknesses of these four types of sensors are compared and the research challenges of SiPM and CZT detectors are discussed and summarized. [ABSTRACT FROM AUTHOR]