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Identification technology based on biometrics is a branch of research that employs the unique individual traits of humans to authenticate identity, which is the most secure method of identification based on its exceptional high dependability and stability of human biometrics. Common biometric identifiers include fingerprints, irises, and facial sounds, among others. In the realm of biometric recognition, fingerprint recognition has gained success with its convenient operation and fast identif ication speed. Different fingerprint collecting techniques, which supply fingerprint information for fingerprint identification systems, have attracted a significant deal of interest in authentication technology regarding fingerprint identification systems. This work presents several fingerprint acquisition techniques, such as optical capacitive and ultrasonic, and analyzes acquisition types and structures. In addition, the pros and drawbacks of various sensor types, as well as the limits and benefits of optical, capacitive, and ultrasonic kinds, are discussed. It is the necessary stage for the application of the Internet of Things (IoT). [ABSTRACT FROM AUTHOR]

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-HEMTs have gained interest as normally-OFF HEMTs thanks to the wider voltage swing and reduced gate leakage current when compared to p-GaN gate HEMTs. However the mandatory AlGaN barrier etching to deplete the 2-DEG combined with the nature of the dielectric/GaN interface generates etching-related defects, traps, and roughness. As a consequence, the threshold voltage (VTH) can be unstable, and the electron mobility is reduced, which presents a challenge for the integration of a fully recessed MIS gate. Recent developments have been studied to solve this challenge. In this paper, we discuss developments in gate recess with low impact etching and atomic layer etching (ALE) alongside surface treatments such as wet cleaning, thermal or plasma treatment, all in the scope of having a surface close to pristine. Finally, different interfacial layers, such as AlN, and alternative dielectrics investigated to optimize the dielectric/GaN interface are presented. [ABSTRACT FROM AUTHOR]

This article discusses the possibilities of two methods for monitoring Physical Vapor Deposition (PVD) process parameters: multi-grid probe, which makes it possible, in particular, to determine the energy distribution of ions of one- or two-component plasma and spectrum analyzer of the glow discharge plasma electromagnetic radiation signal based on the Prony–Fourier multichannel inductive spectral analysis sensor. The energy distribution curves of argon ions in the low-voltage operation mode of ion sources with closed electron current have been analyzed. With a decline in the discharge current, the average ion energy decreases, and the source efficiency (the ratio of the average ion energy W to the discharge voltage U) remains approximately at the same level of W/U ≈ 0.68, ..., 0.71 in the operating voltage range of the source. The spectrum analyzer system can obtain not only the spectra at the output of the sensor, but also the deconvolution of the spectrum of the electromagnetic radiation signal of the glow discharge plasma. The scheme of a spectrum analyzer is considered, which can be used both for monitoring and for controlling the processing process, including in automated PVD installations. [ABSTRACT FROM AUTHOR]

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array. [ABSTRACT FROM AUTHOR]

High permittivity (k) gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a higher permittivity for popular high-k oxides, like HfO2 and La2O3. The second one is crystallization behavior. Although it's still under the debate whether an amorphous film is definitely better than ploy-crystallized oxide film as a gate oxide upon considering the crystal boundaries induced leakage current, the crystallization behavior should be well understood for a high-k gate oxide because it could also, to some degree, determine the permittivity of the high-k oxide. Finally, some high-k gate oxides, especially rare earth oxides (like La2O3), are not stable in air and very hygroscopic, forming hydroxide. This topic has been well investigated in over the years and significant progresses have been achieved. In this paper, I will intensively review the most recent progresses of the experimental and theoretical studies for preparing higher-k and more stable, in terms of hygroscopic tolerance and crystallization behavior, Hf- and La-based ternary high-k gate oxides. [ABSTRACT FROM AUTHOR]

The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular oxygen. Saturation was observed for the growth of the Y2O3 films within an ALD window of 300 to 450 °C and a growth per cycle (GPC) up to 1.1 Å. The resulting Y2O3 films possess a smooth and crystalline structure, while avoiding any carbon and nitrogen contamination, as observed by X-ray photoelectron spectroscopy (XPS). The films showed strong resistance to fluorine-containing plasma, outperforming other resistant materials, such as silicon oxide, silicon nitride and alumina. Interestingly, the hydrophilic character exhibited by the film could be switched to hydrophobic after exposure to air, with water contact angles exceeding 90°. After annealing under N2 flow at 600 °C for 4 min, the hydrophobicity was lost, but proved recoverable after prolonged air exposure or intentional hydrocarbon exposure. The origin of these changes in hydrophobicity was examined. [ABSTRACT FROM AUTHOR]