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Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase alpha -W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a 110 oriented crystal texture are obtained as compared to the 111 orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from sigma =1.80-1.43GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress sigma =0.71GPa is obtained at U-s=200V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher U-s and having the lowest resistivity (14.2 mu Omega cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials. Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Japan Society for the Promotion of Science (JSPS)Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [17KK0136]

In the present study, we investigate the impact of pulse power (Ppulse) on the ion flux and the properties of TiN films using reactive high-power impulse magnetron sputtering. Ppulse was adjusted in the range of 5–25 kW, while keeping the total average power constant through regulating the pulsing frequency. It is found that the required N2 flow, to produce stoichiometric TiN, decreases as Ppulse is increased, which is due to a decrease in the deposition rate. The plasma conditions when stoichiometric TiN is formed were investigated in detail. In situ ion mass spectrometry measurements of the ion energy distribution functions reveal two distinct ion populations, ions originating from sputtered atoms (Ti+, Ti2+, and N+) and ions originating from the working gas (Ar+, Ar2+, and N2+). The average ion energies (Eave) of the sputtered ions show an increase with increasing Ppulse, while Eave for the gas ions remains almost unaffected. The relative flux intensity Ti2+/Ti+ showed an increasing trend, from 0.28 to 0.47, as Ppulse was increased from 5 to 25 kW. The ion flux changes affect the growth of the TiN film such that 111-textured films are grown for low Ppulse while higher Ppulse results in mixed orientations. In addition, the hardness of the deposited film increases with increasing Ppulse, while the compressive film stress increases significantly at a higher Ppulse. In this way, optimum deposition conditions were identified at Ppulse = 8.3 kW, where a relatively low compressive stress of 0.89 GPa and high hardness of 22.67 GPa were measured. Funding agencies: Swedish Research CouncilSwedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at the Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]