1. Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
- Author
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Pougeoise, E., Gilet, Ph., Grosse, Ph., Poncet, S., Chelnokov, A., Gérard, J. -M, Bourgeois, G., Stevens, R., Hamelin, R., Hammar, Mattias, Berggren, Jesper, Sundgren, Petrus, Vilain, S., Bouillard, J. -S, Lerondel, G., Bachelot, R., Royer, P., Pougeoise, E., Gilet, Ph., Grosse, Ph., Poncet, S., Chelnokov, A., Gérard, J. -M, Bourgeois, G., Stevens, R., Hamelin, R., Hammar, Mattias, Berggren, Jesper, Sundgren, Petrus, Vilain, S., Bouillard, J. -S, Lerondel, G., Bachelot, R., and Royer, P.
- Abstract
In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre., QC 20141128
- Published
- 2006
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