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We report on the development of a non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at D-band (110-170 GHz). This transition overcomes the limitations of current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition uses an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good agreement with simulation. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the D-band. Measurement of multiple samples and repeated assemblies results in a variation of S21 of less than +/- 0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications., QC 20210928

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes., QC 20190306

A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600., QC 20180625

A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600., QC 20180625

A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600., QC 20180625

A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600., QC 20180625

A very low-loss micromachined waveguide bandpassfilter for use in D-band (110–170GHz) telecommunication applicationsis presented. The 134–146GHz filter is implemented in a silicon micromachined technology which utilises a double H-plane split, resulting in significantly lower insertion loss than conventional micromachined waveguide devices. Custom split-blocks are designed and implemented to interface with the micromachined component. Compact micromachined E-plane bends connect the split-blocks and DUT. The measured insertion loss per unit length of the waveguide technology (0.008–0.016 dB/mm) is the lowest reported to date for any micromachined waveguide at D-band. The fabricated 6-pole filter, with a bandwidth of 11.8 GHz (8.4%), has a minimum insertion loss of 0.41 dB, averaging 0.5 dB across its 1 dB bandwidth, making it the lowest-loss D-band filter reported to date in any technology. Its return loss is better than 20 dB across 85% of the same bandwidth. The unloaded quality factor of a single cavity resonator implemented in this technology is estimated to be 1600., QC 20180625

We report the concept and development of non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at D-band (110 – 170 GHz). This transition overcomes the limitationof current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition is an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good correspondence with the simulated RF performance. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the D-band. Measurement of multiple samples and repeated assemblies resultsin a variation of S21 of less than ±0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications.