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Perpendicular magnetic tunneling junctions (pMTJs) as true random number generators (TRNGs) have been investigated by means of high-Temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100MHz., Part of ISBN 9798350330113QC 20240705

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical Society

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical SocietyQC 20231102

Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz., QC 20230920

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical Society

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical SocietyQC 20231102

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical SocietyQC 20231102

Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz., QC 20230920

Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of a perpendicularly magnetized MTJ (pMTJ) can lower the energy barrier (Eb) to these transitions leading to faster fluctuations. In this study, we present analytical and numerical calculations of Eb considering both coherent (macrospin) reversal and non-uniform wall-mediated magnetization reversal for a selection of nanodisk diameters and applied fields. Non-uniform reversal processes dominate for larger diameters, and our numerical calculations of Eb using the String method show that the transition state has a sigmoidal magnetization profile. The latter can be described with an analytical expression that depends on only one spatial dimension, parallel to the applied field, which is also the preferred direction of profile motion during reversal. Our results provide nanodisk energy barriers as a function of the transverse field, nanodisk diameter, and material characteristics, which are useful for designing stochastic bitstreams., Under review process in Physical Review Applied by the American Physical SocietyQC 20231102

Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz., QC 20230920

Perpendicular magnetic tunneling junctions(pMTJs) as true random number generators (TRNGs) have been investigated by means of high-temperature micromagnetic simulations using MuMax3. An in-plane applied field, which lowers the energy barrier for thermally activated reversal, can be used to control and increase the bitrates. We study the attempt rate and the energy barrier for 10 and 40 nm diameter devices in various applied magnetic fields. At room temperature, the presence of the field leads to orders of magnitude increase in the bitrate, up to ∼ 100 MHz., QC 20230920