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It is 100 years when we think about the history of ferroelectricity. We, who study ferroelectricity, are honored and pleased to share the 100-year anniversary of ferroelectricity and recall its history. At this great moment, we look back to the brief history on the verge of ferroelectricity. Our hope is that ferroelectricity studied as an early collective phenomenon will be coupled with quantum behavior, the essence of modern science, to become a new age in the history of science and technology.

The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.