1. A wide range 1.0 V-3.6 V 200 Mbps, push-pull output buffer using parasitic bipolar transistors
- Author
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Yasunobu Nakase, T. Shimada, S. Iwade, Hiromi Notani, and H. Makino
- Subjects
Engineering ,Hardware_MEMORYSTRUCTURES ,business.industry ,Transistor ,Bipolar junction transistor ,Electrical engineering ,Buffer amplifier ,Hardware_PERFORMANCEANDRELIABILITY ,Chip ,law.invention ,Integrated injection logic ,CMOS ,law ,Hardware_INTEGRATEDCIRCUITS ,Push–pull output ,business ,Hardware_LOGICDESIGN ,Voltage - Abstract
We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the output buffer utilizes parasitic bipolar transistors instead of MOS transistors to maintain drivability. Furthermore forward body bias control is provided for the level converter in low VDD operation. We fabricated a test chip with a standard 0.15 /spl mu/m CMOS process. Measurement results indicate that the proposed output buffer achieves 200 Mbps operation at VDD of 0.7 V and VDDX of 1.0 V.
- Published
- 2004
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