1. Radiation-hard 16K CMOS/SOS clocked static RAM
- Author
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P. Pandya, H.B. Yang, A. Gupta, K.K. Yu, M.F. Li, and S.C. Su
- Subjects
Materials science ,business.industry ,Transistor ,Tantalum ,Electrical engineering ,chemistry.chemical_element ,Dissipation ,law.invention ,chemistry.chemical_compound ,Read-write memory ,CMOS ,chemistry ,law ,Silicide ,Static random-access memory ,business ,Leakage (electronics) - Abstract
A low-temperature, radiation-hard, 2.21µM channel length, CMOS/SOS process has been developed for a 5V power-supply, 16K clocked static RAM, with a standard six-transistor cell configuration. The well-known edge leakage problem in mesa-isolated N-channel SOS transistors has been eliminated. At V DD of 5V, the 16K RAM has typical access times of 150 nsecs and 110 nsecs with phosphorus doped polysilicon and tantalum silicide gates, respectively; the static power dissipation is 35µW and the operating power is 20 mW at 3 MHz.
- Published
- 1981
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