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2. Chromium Fluoride Attenuated Phase-Shifting Mask for Argon Fluoride Excimer Laser Lithography

Author

Takeshi Ohfuji, Katsumi Maeda, Hiroyoshi Tanabe, Yuko Seki, and Jun Ushioda

Subjects
Materials science, Excimer laser, medicine.medical_treatment, General Engineering, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, law.invention, chemistry.chemical_compound, Chromium, chemistry, Resist, law, Attenuation coefficient, medicine, Photolithography, Fluoride, Refractive index, Lithography
Abstract

Chromium fluoride (CrF) film was chosen as the phase shifter for attenuated phase-shifting masks because of its high transmittance at 193 nm. The refractive index n and absorption coefficient k was derived by using the reflectance-transmittance (RT) method. Using argon fluoride (ArF) excimer laser exposure equipment and a chemically amplified positive resist, fine hole patterns were resolved. Depth of focus (DOFs) with 0.24 µm were extended to 30%. The resolution limit was 0.20 µm, while it was 0.22 µm with a conventional mask.

Published
1996
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