1. Transparent p-AlN:SnO2/n-SnO2 tunnel diode
- Author
-
Chih Yi Hsieh, Y. S. Wei, Ching Han Liao, Cheng Yi Liu, Yen Ju Wu, Po Ming Lee, and Yen Shuo Liu
- Subjects
Materials science ,business.industry ,Annealing (metallurgy) ,Bilayer ,General Engineering ,Resonant-tunneling diode ,General Physics and Astronomy ,Thermal diffusivity ,Wavelength ,Tunnel diode ,Transmittance ,Optoelectronics ,business ,Leaky mode - Abstract
Using the diffusivity discrepancy between Al and N in the SnO2 phase, N-doped n+ and Al-doped p+ degenerate regions were created at the interface by annealing an AlN/SnO2 bilayer. Current–voltage (I–V) characteristics of the p+-AlN:SnO2/n+-SnO2 junction indicate distinct tunnel diode characteristics, such as the tunneling mode, negative differential resistance, and turn-on mode. The overall transmittance of the p-AlN:SnO2/n-SnO2 tunnel diode is higher than 80% in the visible region. In a certain wavelength region, the transmittance of the p-AlN:SnO2/n-SnO2 tunnel diode is even higher than 90%. This shows that a transparent p-AlN:SnO2/n-SnO2 tunnel diode has great potential for use in a broad range of invisible electronics.
- Published
- 2014