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Undoped and Al-doped 3C-SiC films are deposited on Si(100) substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystallinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.

Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.