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The weighted mean is widely used in combining data sets of experimental measurements with a weight proportional to the value of the data number divided by the sample variance in a conventional method. However, this standard procedure is not appropriate for obtaining the weighted mean frequency of a phase-stabilized signal with white phase noise, since the data are autocorrelated. The autocorrelation is obtained in the case of white phase noise and a new weighting method is proposed. Using this, the uncertainty associated with the weighted mean frequency of a phase-stabilized signal with white phase noise is given. The effect of counter dead-time is also discussed.

An L-shaped dual-gate device structure, which reduces kink current in polycrystalline silicon thin-film transistors (poly-Si TFTs), has been proposed and fabricated. In the proposed device, the poly-Si TFTs have a lateral grain growth in channels such as TFTs fabricated by sequential lateral solidification (SLS) or CW laser crystallization. The current flow of dual TFTs is strongly affected by grain boundaries showing lateral grain growth. The L-shaped dual gate structure is employed for asymmetry between dual channels. One of the channels is located in a parallel direction of grain growth and the other is located vertically. It is verified by experiment that the proposed L-shaped dual-gate TFT reduced the kink current of poly-Si TFT and showed improved reliability by fixed current flow in the saturation mode.

We performed the experiment of self-induced transparency in samarium atomic vapor under the condition of high temperature and high density. The sudden onset of the transmission, the maximum pulse delay and the pulse broadening were observed with π pulse. With this result we estimate the dipole moment of the transition line for 152Sm. The peak amplification, the pulse narrowing and the pulse breakup were observed when the pulse area was above 3π. These observations are strong evidences of self-induced transparency. Our result is the observation of self-induced transparency under the highest-temperature, highest-density condition and the first observation of this phenomenon in samarium vapor to our knowledge.

The laser from the Vietnam metrological institute (VMI) was brought to the Korea Research Institute of Standards and Science (KRISS) in November 2007 in the framework of the APMP.L-K11.1 bilateral key comparison. The absolute frequency of the f component of the R(127) 11-5 transition was measured for this laser and KRISS's laser following the protocol for key comparison BIPM.L-K11. The results of these measurements are compiled in the present report. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCL, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

We have fabricated p-channel metal oxide semiconductor (PMOS) solid-phase crystallization silicon (SPC-Si) thin-film transistors (TFTs) employing an alternating magnetic field on a glass substrate, which exhibit better current uniformity than excimer-laser annealed low-temperature polycrystalline silicon (ELA LTPS) TFTs, and superior stability to hydrogenated amorphous silicon (a-Si:H) TFTs. The leakage current of the SPC-Si TFT was larger than that of an a-Si:H TFT and an ELA poly-Si TFT owing to its many grain boundaries. The leakage current of the SPC-Si TFT was successfully suppressed through off-state-bias annealing. Off-state-bias annealing forced electron carriers to be trapped in the gate insulator, thus reducing the gate–drain field and suppressing the leakage current of the SPC-Si TFT. Our experimental result showed that the trapped electron charges in the gate insulator did not escape under thermal annealing or AC-bias stress. The off-state-bias annealed PMOS SPC-Si TFT could be a suitable pixel element for high-quality display applications employing an alternating magnetic field.