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Your search keyword '"Wang, Qilong"' showing total 22 results
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22 results on '"Wang, Qilong"'

1. Vitexin loaded mixed polymeric micelles: preparation, optimization, evaluation and anti-osteoporotic effect

Author

Zhang, Jian, primary, Li, Xiaoxiao, additional, Xia, Xiaoli, additional, Adu-Frimpong, Michael, additional, Shen, Xinyi, additional, He, Qing, additional, Rong, Wanjing, additional, Shi, Feng, additional, Cao, Xia, additional, Ji, Hao, additional, Toreniyazov, Elmurat, additional, Wang, Qilong, additional, Yu, Jiangnan, additional, and Xu, Xi-ming, additional

Published
2023
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10. Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Author

Xu Ji, Zhang Xiaobing, Yang Wenxin, Shi Yutong, Shi Yongjiao, and Wang Qilong

Subjects
010302 applied physics, Work (thermodynamics), Materials science, Acoustics and Ultrasonics, business.industry, Transistor, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Field electron emission, law, 0103 physical sciences, Electrode, Optoelectronics, 0210 nano-technology, business, Nanoscopic scale, Electron-beam lithography, Voltage, Communication channel
Abstract

In this paper, a nanoscale vacuum channel transistor (NVCT) with a side-gate structure is fabricated by standard electron beam lithography. The states of the proposed NVCTs could be effectively modulated by side-gate bias, exhibiting a drive current (>400 nA), low work voltage (103). Moreover, we further optimize the shapes of the electrodes, demonstrating that the electric performance is closely related to the structure parameters. The side-gate NVCT offers an alternative method to fulfill the on-chip vacuum devices with high integration.

Published
2020

13. Analysis and Evaluation of Heavy Metal Content in Remixing Soil by Feldspathic Sandstone and Sand in Mu Us Sandy Land, China

Author

Wang Qilong, Li Juan, and Pang Zhe

Subjects
Metal, Environmental chemistry, visual_art, Significant positive correlation, Soil water, Pollution index, visual_art.visual_art_medium, Environmental science, Sowing, Heavy metals, Metal pollution, Cultivated land
Abstract

In order to ensure the quality of cultivated land with the technology of remixing soil by feldspathic sandstone and sand, the concentrations of eight heavy metals were measured, and the degree of heavy metal pollution in the soil was assessed by Nemerow index and potential ecological risk index. The results showed that, compared with feldspathic, the concentrations of Cr, Ni, Cu, Zn, As, Cd and Pb in the remixing soil decreased by 12.8%, 40.7%, 44.1%, 49.3%, 49.8%, 37.6% and 14.1% respectively. The concentrations of eight heavy metals in sandstone and remixing soil were not significantly different in space, but in sand vary greatly. There was very significant positive correlation among the contents of Ni, Cu, Zn, As, Cd and Pb in the remixing soil, which indicates that the heavy metals have obvious homology. The single pollution index of heavy metals in remixing soil, feldspathic sandstone and sand were all less than one, and the comprehensive pollution index were 0.611, 0.980 and 0.395 respectively. The potential ecological risk index (RI) of heavy metals in remixing soil, feldspathic sandstone and sand were all less than 150, indicating that the soils with three textures showed low ecological risks. After three years of planting, the potential ecological risk index of heavy metals in the remixing soil increased slightly, but the single pollution index was also less than one. The research shows that the remixing soil in Mu Us Sandy Land can ensure the quality of soil environment and the safety of agricultural products.

Published
2019

14. Nanoscale vacuum channel transistor with in-plane collection structure.

Author

Xu, Ji, Hu, Hai, Yang, Wenxin, Li, Chi, Shi, Yutong, Shi, Yongjiao, Wang, Qilong, and Zhang, Xiaobing

Subjects
VACUUM, ELECTRONIC equipment, TRANSISTORS, COLLECTIONS, LOW voltage systems
Abstract

High quality nanoscale vacuum channel transistors (NVCTs) enable carriers to transport ballistically through the vacuum nanogap, achieving high speed and frequency characteristic which are essential for on-chip vacuum electronic devices. However, the studies to date have been largely confined to explore the common electrical performance, while the fast response characteristic of NVCTs remains a challenge. We report the fabrication of metal-based NVCT, with sub-100 nm vacuum channel and specific designed in-plane collection structure which can enhance the emission or collection efficiency of the electrons simultaneously. Importantly, the demonstration of a rise/fall time of less than 100 ns is achieved, which is compatible with those high-quality solid-state transistors based on low-dimensional materials. Moreover, the device can also retain excellent electrical performance, exhibiting a high drive current (>10 μA), low work voltage (<10 V) and high on/off current ratio (>104). The verification of fast temporal response of NVCT makes a significant step towards on-chip vacuum electronics with high speed and integration. [ABSTRACT FROM AUTHOR]

Published
2020
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