1. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric.
- Author
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Shahab Mollah, Mikhail Gaevski, MVS Chandrashekhar, Xuhong Hu, Virginia Wheeler, Kamal Hussain, Abdullah Mamun, Richard Floyd, Iftikhar Ahmad, Grigory Simin, Charles Eddy, and Asif Khan
- Subjects
ORGANIC field-effect transistors ,METAL oxide semiconductor capacitors ,METAL oxide semiconductor field-effect transistors ,ATOMIC layer deposition ,DIELECTRICS - Abstract
We report on Al
0.65 Ga0.35 N/Al0.4 Ga0.6 N metal oxide semiconductor heterojunction field-effect transistor (MOSHFET) with high-k ZrO2 gate-dielectric deposited using atomic layer deposition process. As extracted from frequency dependent capacitance–voltage (CV) characteristics, the oxide gates resulted in an interfacial state trap density of ∼2 × 1012 cm−2 . A comparative study, on the same material, shows the gate-leakage current of the ZrO2 MOSHFETs to be lower by five orders; their ON/OFF current ratio (∼107 ) to be higher by about four orders and their threshold voltage to decrease (less negative) by 3.5 V with respect to the Schottky gate devices. [ABSTRACT FROM AUTHOR]- Published
- 2019
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