1. Point defects in gamma-irradiated n-GaN
- Author
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J. Graul, Valentin V. Emtsev, Alexander N. Smirnov, H. Klausing, T. Rotter, N. M. Shmidt, Alexander Usikov, V. Yu. Davydov, V. V. Lundin, J. Aderhold, O. Semchinova, V. V. Kozlovskii, D. Mistele, D.S. Poloskin, and J. Stemmer
- Subjects
Dopant ,Chemistry ,business.industry ,Annealing (metallurgy) ,Analytical chemistry ,Condensed Matter Physics ,Acceptor ,Crystallographic defect ,Electronic, Optical and Magnetic Materials ,symbols.namesake ,Optics ,Hall effect ,Materials Chemistry ,symbols ,Irradiation ,Electrical and Electronic Engineering ,business ,Raman spectroscopy ,Raman scattering - Abstract
Radiation-induced point defects and their annealing in silicon-doped n-GaN have been investigated by means of Hall effect measurements and Raman spectroscopy. Correlated compensation effects due to simultaneous introduction of donor and acceptor centres are observed in irradiated n-GaN. The defect production rate is dependent on the dopant concentration. This means that the model of all native defects immobile at room temperature is not true. The behaviour of radiation-induced defects upon heating is complicated, exhibiting two prominent stages of reverse annealing. The presence of radiation defects is still observable after annealing to T = 750 °C.
- Published
- 2000
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