1. High-density nanodot structures on silicon solar cell surfaces irradiated by ultraviolet laser pulses below the melting threshold fluence.
- Author
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Hirai, Kenta, Tanaka, Tomoyo, Tsutsumi, Daisuke, Hashida, Masaki, Sakagami, Hitoshi, and Kusaba, Mitsuhiro
- Subjects
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SILICON solar cells , *NANODOTS , *LASER pulses , *SOLAR surface , *CELL membranes , *ULTRAVIOLET lasers , *PHOTOVOLTAIC power systems - Abstract
The surface morphology of silicon solar cells irradiated with KrF excimer laser pulses (λ = 248 nm, τ = 20 ns) was investigated below the experimentally observed melting threshold fluence (F th) of 0.47 J cm−2 (±20%). At laser fluences of 0.23–0.48 J cm−2 (equivalent to 0.49 F th to 1.0 F th), nanodot structures with a height and width of approximately 60–120 nm were periodically formed with an interdot spacing similar to the laser wavelength. The observed nanodot density (29 dots μ m2) was higher than that previously obtained at longer wavelengths. Furthermore, crystallinity analysis by micro-Raman spectroscopy revealed a Raman shift of 519.56 cm−1 after irradiation (N = 1500 pulses), compared with 518.27 cm−1 prior to irradiation. A laser fluence of 0.41 J cm−2 (= 0.87 F th) was found to induce compressive stress on the silicon solar cell surface. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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