1. Seeding Effect by Off-Stoichiometric SrBi2Ta2xO9 Thin Buffer Layer on the Properties of SrBi2Ta2O9 Thin Films.
- Author
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Fan-Yi Hsu, Ching-Chich Leu, and Chen-Ti Hu
- Subjects
CRYSTALLIZATION ,STRONTIUM ,THIN films ,TANTALITE ,MICROSTRUCTURE ,BUFFER solutions ,POLARIZATION (Electricity) - Abstract
The seeding effect on the crystallization behaviors of the SrBi
2 Ta2 O9 strontium bismuth tantalite (SBT) phase on top of a thin Aurivillius buffer layer, SrBi2 Ta2 O9 , was studied. A uniform microstructure and a preferred polar a-axis orientation within the SrBi2 Ta1.8 O9 buffered SrBi2 Ta2 O9 thin film were promoted to achieve a high remanent polarization (2Pr ) value of about 19.7 μC/cm². Furthermore, the SBT/buffer heterostmcture constructed by the two-step process showed a significantly improved leakage property compared with the nonbuffered SBT. The off-stoichiometric thin buffer layer demonstrates a simple method to improve the microstructure, polar a-axis orientation, and electric characteristics and to introduce less defects in the superposed SrBi2 Ta2 O9 thin films. [ABSTRACT FROM AUTHOR]- Published
- 2010
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