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We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots (QDs) on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III–V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factors Q ≈ 17 000 representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of ≈ 400 M H z resonators is achieved to temperatures T > 7 K and electrical radio frequency powers P r f > + 9 d B m . Heterogeneously integrated single QDs couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid QD—surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the QD. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits. [ABSTRACT FROM AUTHOR]

Time-resolved super-resolution microscopy was used in conjunction with scanning electron microscopy to image individual colloidal CdSe/CdS semiconductor quantum dots (QD) and QD dimers. The photoluminescence (PL) lifetimes, intensities, and structural parameters were acquired with nanometer scale spatial resolution and sub-nanosecond time resolution. The combination of these two techniques was more powerful than either alone, enabling us to resolve the PL properties of individual QDs within QD dimers as they blinked on and off, measure interparticle distances, and identify QDs that may be participating in energy transfer. The localization precision of our optical imaging technique was ∼3 nm, low enough that the emission from individual QDs within the dimers could be spatially resolved. While the majority of QDs within dimers acted as independent emitters, at least one pair of QDs in our study exhibited lifetime and intensity behaviors consistent with resonance energy transfer from a shorter lifetime and lower intensity donor QD to a longer lifetime and higher intensity acceptor QD. For this case, we demonstrate how the combined super-resolution optical imaging and scanning electron microscopy data can be used to characterize the energy transfer rate. [ABSTRACT FROM AUTHOR]

Photonic integrated circuits (PICs) based on the silicon-on-insulator platform currently allow high-density integration of optical and electro-optical components on the same chip. This high complexity is also transferred to quantum PICs, where non-linear processes are used for the generation of quantum light on the silicon chip. However, these intrinsically probabilistic light emission processes pose challenges to the ultimately achievable scalability. Here, an interesting solution would be employing on-demand sources of quantum light based on III–V platforms, which are nonetheless very complex to grow directly on silicon. In this paper, we show the integration of InAs quantum dots (QDs) on silicon via the growth on a wafer-bonded GaAs/Si template. To ensure emission in the telecom C-band (∼1550 nm), a metamorphic buffer layer approach is utilized. We show that the deposited single QDs show similar performance to their counterparts directly grown on the well-established GaAs platform. Our results demonstrate that on-demand telecom emitters can be directly and effectively integrated on silicon, without compromises on the performances of either the platforms.

Presence of inorganic pollutants in water reservoirs is the treating factor for human health and environment. Semiconductor quantum dots (QDs) has been regarded as one of the most efficient nanoparticles for their enhanced photocatalytic activity. Medicinal plants are the safe sources to provide green template for biosynthesis of inorganic nanoparticles such as quantum dots. In order to determine the photocatalytic and biological application of cadmium sulfide quantum dots (CdS QDs), a biosynthesis approach was employed using saffron (Crocus sativus L.) stigma extract as the green reaction substrate. The biosynthesis process was evaluated at different pH condition to obtain the most efficient CdS QDs. Characterization of prepared CdS QDs were determined through UVâ€"vis and fluorescence spectroscopy, FTIR and TEM analysis. The obtained results showed well dsispersed and uniform QDs during green synthesis at the optimum condition. The absorption and electrical properties of green synthesized CdS QDs showed the lowest energy bandgap of 2.4 at pH 11. Photocatalytic activity of CdS QDs on Rhodamine B degradation showed 92% degradation after 80 min under UV light irradiation. The antibacterial and cell cytotoxicity of green synthesized CdS QDs were assayed by disk diffusion and MTT assays respectively. Obtained results showed significant antibacterial effect of CdS QDs against gram-positive and gram-negative bacteria including B. subtilis (90%) and E. coli (96%) respectively. Moreover, cytotoxicity of prepared CdS Qds through MTT assay indicated 79% apoptosis induction on MCF-7 breast cancer cells. [ABSTRACT FROM AUTHOR]

We investigate theoretically the population transfer process in a Λ-type three-level quantum system (QS) near a metallic nanosphere using the stimulated Raman adiabatic passage (STIRAP) technique. We combine density matrix quantum dynamical calculations with first-principle electromagnetic calculations, which quantify the influence of the plasmonic nanoparticle on the electric field of the pump and Stokes pulses in STIRAP as well as on the spontaneous emission rates within the Λ-type system. We study the population transfer process by varying the free-space spontaneous emission rate, the distance of the QS from the nanosphere, the polarization direction with respect to the nanoparticle surface and the relative strength of the pump and Stokes pulses used in STIRAP. We find that when the pump and Stokes fields have tangential and radial polarizations with respect to the nanosphere surface, the transfer efficiency is improved due to the increase of the decay rate of the excited state to the target state relatively to the decay to the initial state. The optimal population transfer is achieved for small interparticle distances, moderate free space spontaneous decay rate, large values of the pump Rabi frequency and small values of the Stokes Rabi frequency. When we exchange the polarization directions of the pump and Stokes fields we can still find a range of parameters where the population transfer remains efficient, but larger Stokes Rabi frequencies are necessary to overcome the increased decay rate from the excited state back to the initial state. [ABSTRACT FROM AUTHOR]

Carbon dots (CDs) endowed with outstanding physico-chemical characteristics expeditiously garnered tremendous popularity in the scientific community. CDs can be synthesized from a variety of natural resources and can replace metal semiconductor quantum dots in the range of applications such as bio-imaging, sensing and catalysis. Herein, CDs are green synthesized from Beta vulgaris via a single step hydrothermal approach (b-CDs). The synthesized carbon dots are characterized using UVâ€"visible spectrophotometry, Fluorescence spectroscopy, High resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), x-ray diffraction technique (XRD) and Raman spectroscopy. The b-CDs hence developed exhibited the signature ‘excitation-dependent fluorescence emission’ with its most intense emission in the green region. The quantum yield for the b-CDs obtained by this synthetic approach evinced an appreciable value of 11.6%. The antioxidant property of b-CDs are evaluated using 2, 2-diphenyl-1-picrylhydrazyl (DPPH) assay to obtain a maximum scavenging activity of 94.5% at a concentration of 1000 ÎĽ g mlâˆ'1 and its underlying mechanisms are illustrated. The blood compatibility of b-CDs are assessed using haemolysis assay and the cytotoxicity evaluated using MTT assay shows significant cell growth-inhibition against the human breast cancer (MCF-7) and hepatocellular carcinoma (HepG2) cell lines. This succinct study demonstrates the inherent therapeutic potential of biocompatible carbon dots. [ABSTRACT FROM AUTHOR]

We investigate the effect of spin–orbit interaction on the intra- and interdot particle dynamics of a double quantum dot (QD) under ac electric fields. The former is modeled as an effective ac magnetic field that produces electric-dipole spin resonance transitions, while the latter is introduced via spin-flip tunneling amplitudes. We observe the appearance of non-trivial spin-polarized dark states (DSs), arising from an ac-induced interference between photo-assisted spin-conserving and spin-flip tunneling processes. These DSs can be employed to precisely measure the spin–orbit coupling in QD systems. Furthermore, we show that the interplay between photo-assisted transitions and spin-flip tunneling enables the system to operate as a highly tunable spin filter. Finally, we investigate the operation of the system as a resonant flopping-mode qubit for arbitrary ac voltage amplitudes, allowing for high tunability and enhanced qubit control possibilities.

Perovskite solar cells (PSCs) are important candidates for next-generation thin-film photovoltaic technology due to their superior performance in energy harvesting. At present, their photoelectric conversion efficiencies (PCEs) are comparable to those of silicon-based solar cells. PSCs usually have a multi-layer structure. Therefore, they face the problem that the energy levels between adjacent layers often mismatch each other. Meanwhile, large numbers of defects are often introduced due to the solution preparation procedures. Furthermore, the perovskite is prone to degradation under ultraviolet (UV) irradiation. These problems could degrade the efficiency and stability of PSCs. In order to solve these problems, quantum dots (QDs), a kind of low-dimensional semiconductor material, have been recently introduced into PSCs as charge transport materials, interfacial modification materials, dopants and luminescent down-shifting materials. By these strategies, the energy alignment and interfacial conditions are improved, the defects are efficiently passivated, and the instability of perovskite under UV irradiation is suppressed. So the device efficiency and stability are both improved. In this paper, we overview the recent progress of QDs' utilizations in PSCs. [ABSTRACT FROM AUTHOR]

With the economic and social developments, the demand for higher quality displays has always remained strong. The emerging 8K displays represent an advancement of ultra-high resolution. Other parameters such as the contrast ratio and viewing angle were all improved significantly. Here, we would like to address the recent efforts in the color (color gamut) of displays toward an ultra-wide color gamut, which we call the 'color revolution'. In the past few years, fluorescent semiconductor quantum dots, quantum rods, fluorescent perovskite nanocrystals, and nanoplatelets with narrow emission have been discovered, and have been explored in display technologies as photoluminescent enhancement films, color convertors, or electroluminescent emissive layers. As a result, the color gamut of display technologies was broadened remarkably, enabling the color revolution. Here, we provide a review of this exciting progress iin the color revolution. [ABSTRACT FROM AUTHOR]

A robust algorithm based on cross-correlations and lucky imaging reliably allows the correction of spectrally diffused datasets. This step enables the resolution-limited analysis of the emission fine structure of semiconductor quantum dots (QDs). Bright and dark excitonic transitions are resolved with optimum signal-to-noise ratio, allowing for a precise determination of the angular direction of linear polarization of the different lines. The angular phases between polarization directions are intrinsically connected to the orientations of emission dipoles. This fact provides a tool for accurate numerical computation of the azimuth and polar angle of the QD with respect to the optical axis. Our in-situ characterization of QD fine structure and orientation represents a precise and non-invasive method without requiring specialized equipment beyond a standard luminescence setup. In this way, important information is provided whenever efficient coupling of a quantum emitter to the electromagnetic field is targeted by various nano- and micro-optic strategies. [ABSTRACT FROM AUTHOR]

In this paper, the gain engineering of a semiconductor quantum dots fiber amplifier (SQDFA) is studied. The optical amplification is realized by exciting the PbS quantum dots coated around the tapered single-mode fiber coupler with an evanescent wave. The gain spectra and saturation properties of the SQDFA are obtained via solving the rate and coupled power equations based on the two-level model. Then, the effect of the signal wavelength, pump power and amplifier length on the saturation characteristics is numerically simulated. The obtained results show that the proposed model is in a good agreement with the previous experimental results. Unique characteristics of the SQDFA such as the broadband optical gain and smooth bandwidth are of great interest for dense wavelength-division multiplexing systems. Therefore, the proposed model show promising applications in the future fiber-optic communications. [ABSTRACT FROM AUTHOR]

Hybrid systems consisting of colloidal CdS/ZnS core/shell quantum dots on ZnSe semiconductor substrates have been studied by continuous-wave and nanosecond time-resolved photoluminescence. On the basis of kinetic calculations, we studied the interplay between the possible transfer processes in these hybrids. The considered transfer mechanisms were resonance energy transfer, photon reabsorption, electron and hole tunneling. Depending on the size of the CdS cores the dominating transfer mechanism is changing. Carrier tunneling was found only for quantum dots in direct contact to the substrate. For large quantum dots a hole tunneling was found, whereas in case of small dots the fast electron tunneling is decisive. Eventually, we were able to determine the conduction band offset between CdS and ZnSe to 0.56 eV at 10 K. [ABSTRACT FROM AUTHOR]

Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density. In this paper, we study the growth of In nanostructures by droplet epitaxy on various AlGaAs surfaces. We demonstrate that an increase in the Al content leads to a decrease in the droplet density and an increase in their size, which contradicts the Stranski–Krastanov QD growth. Using a hybrid analytical–Monte Carlo model, we explain this phenomenon by the fact that In adatoms acquire higher mobility on a first indium monolayer which is bound to surface Al atoms. This assumption is confirmed by the fact that a temperature decrease does not lead to a great increase in the critical thickness of droplet formation on the Al-containing surfaces whereas it changes considerably on the GaAs surface. Furthermore, the Al content influence on the formation of In droplets is much less significant than on the growth of InAs QDs by the Stranski–Krastanov mode. This gives an opportunity to use droplet epitaxy to control the matrix bandgap without considerable influence on the QD characteristics. [ABSTRACT FROM AUTHOR]

In the past decades, low-dimensional semiconductors received intensive research interest. By introducing intentionally size-confined nanostructures or crystal imperfections, low-dimensional semiconductors have been broadly exploited as zero-dimensional quantum dots (QDs) for high-performance quantum emitters. The QD-based nonclassical light sources allow not only the deterministic generation of single photons but also entangled-photon pairs. However, the randomness in strain, shape and composition in semiconductors results in unpredictable transition energies for different QDs. This complication impedes the generation of single and entangled photons with well-defined energies, which fundamentally limits the success probability of scalable quantum information technologies. Strain engineering, a unique and powerful method to reshape the electronic states of semiconductors, has advanced the development of all-solid-state low-dimensional semiconductor based single and entangled-photon sources. In this review, the recent progress of employing mechanical strain field to control the electronic states and optical properties of low-dimensional semiconductors is reviewed. A comprehensive summary of diverse strain engineered devices for engineering the exciton binding energy, the coherent coupling of electronic states, the optical properties of low-dimensional semiconductors including single and entangled photons are provided. In addition, prospects and challenges of deploying the strain-engineering technique for future scalable quantum networks and photonic quantum circuits are discussed. [ABSTRACT FROM AUTHOR]

In this paper, a theoretical model is proposed to investigate and analyze an ultra-fast cross gain modulation (XGM) in quantum dot semiconductor optical amplifiers (QDSOAs). The proposed model is based on a set of carrier's rate equations, propagation equations for pump and probe signals and phase equations. To investigate the XGM mechanism, nonreturn-to-zero (NRZ) pulse trains with various bitrates are supposed to propagate as the input pump signals through the QDSOA's active layer. The probe signal is assumed to be a continuous wave (CW) signal. Furthermore, optical gain of quantum dots (QDs) is calculated using a density matrix approach. For the first time, to the best of our knowledge, a second excited state is considered in the band diagram of QDs, to obtain the ultra-fast XGM in QDSOAs. Therefore, in the presented model, the rate equations are written for the carriers in the ground state, first and second excited states (ES2), continuum state and the wetting layer. In the presence of ES2, gain recovery time and gain saturation is reduced and, therefore, ultra-high bitrate pulse trains can be modulated with negligible pattern effects and wave distortion. The effect of the injection current density increment and carrier's relaxation lifetime decrement are illustrated to show the improvement in the XGM mechanism in the QDSOA. It is shown theoretically that ultra-high bitrate XGM up to 450 Gbps is possible due to the reduced gain recovery time in the presence of ES2. It is demonstrated that at the same pump power for higher injection current densities and lower carrier relaxation lifetimes, the pattern effect and wave distortion has almost vanished. Although, in this case, the extinction ratio (ER) is decreased. It is shown that to recover the ER, the input pump power should be increased. Furthermore, based on the results in the presence of ES2, the ER is decreased by 0.5 dB. [ABSTRACT FROM AUTHOR]

We theoretically explore optical bistability for the possible signature of all-optical switching and their performance in a hybrid quantum optomechanical system comprising of two semiconductor microcavities coupled optically. One of the cavity is driven by an external amplitude-modulated pump laser while the second cavity, which contains a quantum dot (QD), is indirectly driven by light transmitted from the first cavity and a transverse optical field. The generated bistable behavior due to optomechanical nonlinearity shows a typical optical switching behavior and it can be controlled by changing the laser power, QD cavity coupling, modulating amplitude/frequency and the optomechanical coupling. A clear signature of energy exchange between the mechanical and optical modes is visible from the mechanical displacement spectrum. These results suggest that the present system can be used in sensitive optical switches and optical sensors. [ABSTRACT FROM AUTHOR]

Non-polar nitride single-photon sources are developed in order to minimise the undesired side effects caused by the internal fields of polar nitrides, while retaining the benefits of high-temperature single-photon generation from a semiconductor quantum dot platform. As a relatively newer single-photon source, several reports have already been made highlighting their interesting optical and photophysical properties. These include an average ultrafast radiative exciton recombination lifetime of <200 ps, an average slow-timescale spectral diffusion of <40 μeV, polarisation-controlled single-photon generation up to 220 K, and temperature-dependent fine-structure splitting. In this review, the photophysics, improvement of optical properties, and future of non-polar nitride single-photon sources will be closely examined based on current reports in the literature. [ABSTRACT FROM AUTHOR]

The emerging materials of semiconductor quantum dots/graphene oxide (QDs/GO) hybrid composites have recently attracted intensive attention in materials science and technology due to their potential applications in electronic and photonic devices. Here, a simple and universal strategy to produce DNA-programmed semiconductor quantum dots/graphene oxide (QDs/GO) hybrid composites with controllable sizes, shapes, compositions, and surface properties is reported. This proof-of-concept work successfully demonstrates the use of sulfhydryl modified single-stranded DNA (S-ssDNA) as a 'universal glue' which can adsorb onto GO easily and provide the growth sites to synthesize CdS QDs, CdSe QDs, CdTe QDs and CdTeSe QDs with distinctive sizes, shapes and properties. Also, adapting this method, other graphene oxide-based hybrid materials which are easily synthesized in aqueous solution, including oxides, core–shell structure QDs and metal nanocrystals, would be possible. This method provided a universal strategy for the synthesis and functional realization of graphene -based nanomaterials. [ABSTRACT FROM AUTHOR]

We experimentally and analytically investigate the influence of temperature on the linewidth of an InP quantum dot (QD) laser. The full width half maximum of the peak in the optical spectrum strongly depends on the pump current and rebroadens at high injection levels. We show that with increasing temperature these effects are amplified. Applying a QD laser model including the excited and ground state with detailed balance scattering rates, we are capable of reproducing the experimentally observed data qualitatively and thus show that a relatively simple QD-laser model is capable of capturing this complex behavior. Additionally, we include a temperature dependent energy band gap reduction needed to fit the data and show that this effect enhances the rebroadening effect for higher temperatures. [ABSTRACT FROM AUTHOR]

A tetraphenylporphyrin (TPP) doped PFBT polymer quantum dots (TP-Pdots) were synthesized via the reprecipitation method for photoelectrochemical (PEC) aptasensor detection of tetracycline (TC). The TP-Pdots exhibit a superior cathode photocurrent signal. TP-Pdots increase the separation of photo-generated charges, and improve photocurrent conversion efficiency, resulting in enhanced photocurrent response. The aptamer was used as a recognition element and TP-Pdots as a photoactive material to prepare a PEC aptasensor for sensitivity detection of TC. The PEC aptasensor was constructed by immobilizing TP-Pdots on ITO electrode and combining it with aptamer by EDC coupling. After the TC reacts specifically with the aptamer, causing the aptamer to fall off from the TP-Pdots /ITO electrodes surface and the photocurrent intensity restored. This PEC aptamer sensor possesses a wide linear range from 1.0 nmol.l−1 to 1.0 × 10 4 nmol.l−1 with the detection limit of 0.26 nmol.l−1 . Meanwhile, the PEC aptasensor was successfully used for the detection of tetracycline in honey. [ABSTRACT FROM AUTHOR]

III−V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend the QD emission wavelength to 850–880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes. The evolution of InGaAs nanostructures by high temperature indium droplet epitaxy on GaAs substrate is revealed. By carefully designing the appropriate growth conditions, symmetric QDs with the a small fine structure splitting of only ∼4.4 ± 0.8 μeV are demonstrated. Averaging over the emission energies of 32 QDs, an ensemble broadening of 12 meV is observed. Individual QDs are shown to emit nonclassically with clear evidence of photon antibunching. These highly uniform and symmetric nanostructures represent a very promising novel strategy for quantum information applications. [ABSTRACT FROM AUTHOR]

Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot (QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics in InAs semiconductor quantum dots forming various heterostructure geometries with their different capping layers. The carriers (electron-hole pairs) are optically injected into three dimensional heterostructure barriers after which, we monitor the carrier relaxation into the zero-dimensional InAs dots by using picosecond resolved time correlated single photon counting technique. We have explicitly investigated and analyzed the effect of three different capping layers, GaAs (binary), In0.15Ga0.85As/GaAs (ternary) and In0.21Al0.21Ga0.58As/GaAs (quaternary) offering various optical properties of InAs quantum dots. It has been observed that quaternary strain reducing layer effectively suppresses Indium migration from the QDs and enhances the confinement of carriers inside the QD heterostructures. In this study, we also find that thermal stability of the carriers is improved in the quaternary capped QDs more effectively compared to the conventional binary and ternary capped one. In brief, our experiments provide essential insight into carrier relaxation in the InAs QDs across various capping layers. [ABSTRACT FROM AUTHOR]

The simulated noise used to benchmark wavelet edge detection in this work was described incorrectly. The correct description is given here, and new results based on noise that matches the original description are provided. The results support our original conclusion, which is that wavelet edge detection outperforms thresholding in the presence of white noise and 1/ f noise. [ABSTRACT FROM AUTHOR]

Semiconductor quantum dots (QDs) have been shown to be highly sensitive to electron or charge transfer processes, which may alter their optical properties. This feature can be exploited for different sensing applications. Here, we demonstrate that QD-anthraquinone conjugates can function as electron transfer-based pH nanosensors. The attachment of the anthraquinones on the surface of QDs results in the reduction of electron hole recombination, and therefore a quenching of the photoluminescence intensity. For some anthraquinone derivatives tested, the quenching mechanism is simply caused by an electron transfer process from QDs to the anthraquinone, functioning as an electron acceptor. For others, electron transfer and energy transfer (FRET) processes were found. A detailed analysis of the quenching processes for CdSe/ZnS QD of two different sizes is presented. The photoluminescence quenching phenomenon of QDs is consistent with the pH sensitive anthraquinone redox chemistry. The resultant family of pH nanosensors shows pKa ranging ∼5–8, being ideal for applications of pH determination in physiological samples like blood or serum, for intracellular pH determination, and for more acidic cellular compartments such as endosomes and lysosomes. The nanosensors showed high selectivity towards many metal cations, including the most physiologically important cations which exist at high concentration in living cells. The reversibility of the proposed systems was also demonstrated. The nanosensors were applied in the determination of pH in samples mimicking the intracellular environment. Finally, the possibility of incorporating a reference QD to achieve quantitative ratiometric measurements was investigated. [ABSTRACT FROM AUTHOR]

The fundamental building block of quantum information processing technologies is the quantum-bit a ‘qubit.’ These technologies require the ability to prepare, control, and read out a qubit state. Spins confined in self-assembled quantum dots are promising candidates for a quantum bit, because semiconductors are compatible with mature modern opto- and micro-electronics. These quantum dot systems offer two more advantages: they are excellent interfaces between the spin state—an anchored qubit and a photon—a ‘flying qubit’ and they provide means to coherently control the spin qubit by ultrashort optical pulses. In this review, we thoroughly discuss the qubit provided by an optically-excited electron in a quantum dot–the exciton qubit. We demonstrate its spin state initialization, coherent control and read-out using ultrashort optical pulses. [ABSTRACT FROM AUTHOR]

Several aspects concerning optical absorption in 3D assemblies of semiconductor quantum dots (QD solids) were studied. Considering the numerically simulated spectral dependences of the absorption coefficient in the case 3D QD assemblies with finite crystal size distribution, described by log-normal probability distribution functions (PDFs), several fundamental predictions were derived. First of all, it is predicted that the band gap energy of the QD solid should exhibit a certain ‘red-shift’ upon enlargement of the dispersion of the crystal size at a fixed average value thereof when the size-quantization regime in individual QDs has been entered. Furthermore, very large Urbach energy values are predicted, comparable to those characteristic for amorphous materials, for semiconductor QD solids with finite dispersion of the crystal size when the average QD size falls within the size-quantization interval. The Urbach energy in 3D assemblies composed by strongly quantized QDs with large dispersions of the PDFs characterizing the size distributions could be 100 times larger than the values in the non-quantized case (regardless of the size distribution in the latter case). Such large values are not due to the structural disorder inherent to individual QDs constituting the array, but a consequence of the disorder on the superlattice scale. Analogous arguments could be applied to predict large Urbach energies corresponding to the absorption tails in absorption spectra constructed from the spectral response of stationary nonequilibrium conductivity (photoconductivity). All these predictions are in excellent agreement with the available experimental data. Moreover, the presented approach could enable exact prediction of the optical absorption of a semiconductor QD solid if the PDF of the crystal size is known from the experiment. The smearing of excitonic absorption peaks in QD solids induced as a consequence of particle size distribution is considered and analyzed to some extent as well. [ABSTRACT FROM AUTHOR]

Exciton g-factors have been measured for a series of single and bilayer InAs/GaAs semiconductor quantum dot (QD) ensembles emitting at wavelengths in the range 1150–1380 nm at low temperatures. A large g-factor tuning range is demonstrated, from −3 for smaller dots having a large aspect ratio to +3 for larger bilayer dots having a smaller aspect ratio and emitting at important telecommunications wavelengths. For dots emitting around 1250 nm the measured g-factors are found to be close to zero and are potentially important for future spin-based technologies. [ABSTRACT FROM AUTHOR]

We report on anisotropic strain induced fine-tuning of semiconductor quantum dots (QDs) embedded into a photonic crystal nanocavity. Due to a complete removal of the sample substrate we achieve large spectral tuning ranges of up to 5.83 meV for the QD emission lines, which is sufficient to readily establish spectral resonance with the high Q cavity mode. When the QD emission lines are swept through the mode, we observe an enhancement of the QD emission in this weakly coupled QD–resonator system. [ABSTRACT FROM AUTHOR]

We apply amolecular dynamics scheme to analyze classically chaotic properties of a two-dimensional circular billiard system containing two Coulombinteracting electrons. As such, the system resembles a prototype model for a semiconductor quantum dot. The interaction strength is varied from the noninteracting limit with zero potential energy up to the strongly interacting regime where the relative kinetic energy approaches zero. At weak interactions the bouncing maps show jumps between quasi-regular orbits. In the stronginteraction limit we find an analytic expression for the bouncing map. Its validity in the general case is assessed by comparison with our numerical data. To obtain a more quantitative view on the dynamics as the interaction strength is varied, we compute and analyze the escape rates of the system. Apart from very weak or strong interactions, the escape rates show consistently exponential behavior, thus suggesting strongly chaotic dynamics and a phase space without significant sticky regions within the considered time scales. [ABSTRACT FROM AUTHOR]

Interaction of a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle (MNP) with a laser beam can replace the intrinsic plasmonic field of the MNP with a coherently normalized field (coherent-plasmonic or CP field). In this paper we show how quantum coherence effects in such a hybrid system can form a coherent barrier (quantum cage) that spatially confines the CP field. This allows us to coherently control the modal volume of this field, making it significantly smaller or larger than that of the intrinsic plasmonic field of the MNP. We investigate the spatial profiles of the CP field and discuss how the field barrier depends on the collective states of the hybrid system. [ABSTRACT FROM AUTHOR]

We investigate pump-induced exciton inversion in a quantum-dot cavity system with continuous wave drive. Using a polaron-based master equation, we demonstrate excited-state populations above 0.9 for an InAs quantum dot at a phonon bath temperature of 4 K. In an exciton-driven system, the dominant mechanism is incoherent excitation from the phonon bath. For cavity driving, the mechanism is phonon-mediated switching between groundand excited-state branches of the ladder of photon states, as quantum trajectory simulations clearly show. The exciton inversion as a function of detuning is found to be qualitatively different for exciton and cavity driving, primarily due to cavity filtering. The master equation approach allows us to include important radiative and non-radiative decay processes on the zero phonon line, provides a clear underlying dynamic in terms of photon and phonon scattering, and admits simple analytical approximations that help to explain the physics. [ABSTRACT FROM AUTHOR]

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad-type relaxation terms. Significant differences between the two approaches are found. [ABSTRACT FROM AUTHOR]

We use non-close packed colloidal lithography to prepare hexagonal magnetic antidot arrays with varying diameters at a period of 205 nm. Smaller antidots are attractive for applications as spin waveguides in magnonics. Larger antidots form a magnetically frustrated system, i.e. Kagome spin-ice, as we prove by magnetic force microscopy. The simple but effective approach successfully extends the limits of top-down lithography previously used to study spin-ice configurations and emergent magnetic monopoles towards smaller structures. [ABSTRACT FROM AUTHOR]

Self-driven photodetectors are widely used in communication and imaging. As a newly developed semiconductor material, perovskite quantum dots (QDs) are not only bandgap tunable, but also easily combined with other materials. In this paper, a vertical structure self-driven photodetector based on heterojunction of CsPbBr3 QDs and PbS QDs is proposed, and the device is prepared by solution spin coating method. The device can work in visible and near infrared (400–1130 nm) regions, and has excellent performance, such as ultrafast response speed (rise and decay time are 0.4 μs/0.73 μs under 532 nm laser irradiation in self-driven mode, the estimated response time under 1064 nm laser irradiation is about 11.5 μs), more than 100 dB linear dynamic range for both visible and infrared regions, and good stability. Similarly, the responsivity of the photodetector can also reach an average of 10 mA W−1, and the detectivity is 1.13 × 1010 Jones at 0 V bias for 1064 nm laser irradiation. The device combines two kinds of QDs revealing its good prospects and great advantages in self-driven photodetectors and high-speed optical communication devices. [ABSTRACT FROM AUTHOR]