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We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

By using a cw Ar+ ion laser beam, microscopic crystalline silicon rods ≈102 µm in diameter and ≈103 µm in height have been grown on a silicon substrate by pyrolytic dissociation of SiH4. The kinetics of lateral growth of the silicon rods is derived from the time integration of the Arrhenius equation using a reasonable assumption that the temperature on the edge of the deposit saturates inversely to the substrate temperature with illumination time. For the axial growth, excluding the initial transient growth, the same result as Bäuerle and his collaborators is derived. The influences of laser power and illumination time on the deposited diameter and height are found experimentally, and it is found that the derived theory agrees well with the experimental results.