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We present a generalized theoretical description of the 30 × 30 k ⋅ p approach for determining the band structure of the direct-band-gap semiconductors (InAs, InP, InSb), including the d far-levels contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. This model gives access to the second conduction band which is useful for transport modelling. We finally show that this method also gives explicit expressions for the Luttinger parameters, the κ valence band parameter and the effective masses in the Γ valley.

A 34-band k ⋅ p model is used to compute the standard k ⋅ p band parameters at Γ, X and L valleys in indirect-band-gap bulk materials for Td (AlAs) and Oh (Si, Ge) group semiconductors. The values of the effective masses for electrons, heavy and light holes in the Γ, X and L valleys are in very good agreement with those reported in other publications. Satisfactory agreement with available experimental data is also obtained by the present model. Finally, our results show that the Luttinger parameters, the κ valence band parameter and the effective Lande factor g* are in good agreement with available experimental data. In particular, the adjustment of the k ⋅ p Hamiltonian parameters proved that the g* of AlAs, Ge and Si are respectively 1.50, −2.79 and 1.96, which are in good agreement with the experimental values of 1.52, −2.50 and 1.99.