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Upcoming exascale applications could introduce significant data management challenges due to their large sizes, dynamic work distribution, and involvement of accelerators such as graphical processing units, GPUs. In this work, we explore the performance of reading and writing operations involving one such scientific application on two different supercomputers. Our tests showed that the Adaptable Input and Output System, ADIOS, was able to achieve speeds over 1TB/s, a significant fraction of the peak I/O performance on Summit. We also demonstrated the querying functionality in ADIOS could effectively support common selective data analysis operations, such as conditional histograms. In tests, this query mechanism was able to reduce the execution time by a factor of five. More importantly, ADIOS data management framework allows us to achieve these performance improvements with only a minimal amount of coding effort.

In recent years, with the continuous development of network technology, our daily life has been inseparable from the Internet. The increasing popularity of various terminal devices has brought about a variety of system and screen sizes. How to maintain the consistency of user experience among a large number of device terminals has attracted more and more attention. As a bridge between human beings and Internet products, whether the interface design is satisfactory to users fundamentally affects the use of products, which is also a hot research topic at home and abroad. Based on the research of multi-screen interactive design, combined with the consistency theory and the construction method of consistent experience, this paper proposes to construct multi-screen interactive consistent experience by seeking commonness from the micro level and emphasizing the use of scenes from the macro level.

Nano Reticular MoS2 is prepared in the hydrothermal method. By means of hydrothermal method, the cathode material of composite electrode of MoS2/RuO2 is prepared. For all kinds of prepared samples, physical characterization analysis, such as SEM and XRD, and electrochemistry tests, such as cyclic voltammetry, alternating-current impedance and galvanostatic charge-discharge, are conducted. The test results show that the addition of a small amount of molybdenum disulfide improves the specific capacity of composite electrode, lowers alternating equivalent impedance and improves conservation ratio of specific capacity. When the doping content of molybdenum disulfide is 25%, specific capacity of binary composite electrode can reach 413 F/g and equivalent alternating-current impedance is equal to 0.665Ω. By means of 800 charge-discharge cycles, specific capacity still remains around 87%.

Non-thermal plasma technology is a new type of odor treatment processing. We deal with H2S from waste gas emission using non-thermal plasma generated by dielectric barrier discharge. On the basis of two criteria, removal efficiency and absolute removal amount, we deeply investigate the changes in electrical parameters and process parameters, and the reaction process of the influence of ozone on H2S gas removal. The experimental results show that H2S removal efficiency is proportional to the voltage, frequency, power, residence time and energy efficiency, while it is inversely proportional to the initial concentration of H2S gas, and ozone concentration. This study lays the foundations of non-thermal plasma technology for further commercial application.

We demonstrate a dual-gate (DG) AlGaN/GaN high-electron-mobility transistor (HEMT) structure with enhancement-mode (E-mode) operation. The DG device consists of an E-mode gate and a depletion-mode (D-mode) gate instead of the dual D-mode gate electrodes used in previously reported works; thus no negative voltage supply is required when the DG device is used in amplifier circuits. The E-mode DG HEMTs exhibit similar DC characteristics to E-mode single-gate devices but show a 9 dB gain improvement at 2.1 GHz under the same bias conditions. The power gain improvement can be attributed to the higher output impedance and lower feedback capacitance in the DG structure.

We demonstrate a new planar fabrication technology for integrating enhancement/depletion (E/D) mode AlGaN/GaN high electron mobility transistors (HEMTs) using fluoride plasma treatment techniques. The CF4 plasma treatment is used in two separate steps to achieve two objectives: 1) active device isolation; and 2) threshold voltage control for the E-mode HEMT formation. Compared with the devices formed by standard mesa etching, the HEMTs by planar process have comparable DC characteristics, with no obvious difference in device isolation. By using the planar process, the E/D-mode HEMTs are integrated on the same chip, and a direct-coupled FET logic inverter and a 17-stage ring oscillator are fabricated. When the supply voltage is 4.5 V, the ring oscillator yields a frequency of 146 MHz, corresponding to a propagation delay of 201 ps/stage.

In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano-metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.