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6 results on '"Riikonen J"'

2. Low Temperature Growth GaAs on Ge

Author

Knuuttila, L., primary, Lankinen, A., additional, Likonen, J., additional, Lipsanen, H., additional, Lu, X., additional, McNally, P., additional, Riikonen, J., additional, and Tuomi, T., additional

Published
2005
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5. Examination of mechanical stresses in silicon substrates due to lead tin solder bumps via micro-Raman spectroscopy and finite element modelling

Author

Kanatharana, J, primary, P rez-Camacho, J J, additional, Buckley, T, additional, McNally, P J, additional, Tuomi, T, additional, Riikonen, J, additional, Danilewsky, A N, additional, O Hare, M, additional, Lowney, D, additional, Chen, W, additional, Rantam ki, R, additional, and Knuuttila, L, additional

Published
2002
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6. Comparison of induced stresses due to electroless versus sputtered copper interconnect technology.

Author

McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D. W., Tuomi, T., Danilewsky, A. N., Knuuttila, L., Riikonen, J., and Toivonen, J.

Abstract

Mechanical strains and stresses are a major concern in the development of copper-based on-chip metallization. Synchrotron x-ray topography and micro-Raman spectroscopy have been used to confirm that the stress regimes imposed in the underlying Si substrate as a result of electroless or sputtered Cu deposition are very different. For the same copper geometry and line width, the electroless Cu metallization places the Si near the outside edge of the metal line in a tensile stress, whereas, the sputtered Cu metallization puts the Si near the outside edge of the metal line in compression. This may have implications for device operation, compatibility with inter-level dielectrics and device reliability. [ABSTRACT FROM AUTHOR]

Published
2004
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