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We construct a reflective broadband acoustic coding metasurface using bubbles as the unit. The reflected phase difference between the cube bubble unit and the pure water unit is about π over a wide frequency range. The broadband phenomenon could be explained by the reflection theory between the soft water–air interface and the hard water–rigid interface. Its relative bandwidth reaches 187%, close to 200% of the theoretical limit. By reconstructing the 0/1 sequence, we performed numerical simulation on broadband acoustic focusing and diffusing reflection. The research in this work has potential applications in improving the performance of underwater communication and cloaking.

An open quantum battery (QB) model of a single qubit system charging in a coherent auxiliary bath (CAB) consisting of a series of independent coherent ancillae is considered. According to the collision charging protocol we derive a quantum master equation and obtain the analytical solution of QB in a steady state. We find that the full charging capacity (or the maximal extractable work (MEW)) of QB, in the weak QB-ancilla coupling limit, is positively correlated with the coherence magnitude of ancilla. Combining with the numerical simulations we compare with the charging properties of QB at finite coupling strength, such as the MEW, average charging power and the charging efficiency, when considering the bath to be a thermal auxiliary bath (TAB) and a CAB, respectively. We find that when the QB with CAB, in the weak coupling regime, is in fully charging, both its capacity and charging efficiency can go beyond its classical counterpart, and they increase with the increase of coherence magnitude of ancilla. In addition, the MEW of QB in the regime of relative strong coupling and strong coherent magnitude shows the oscillatory behavior with the charging time increasing, and the first peak value can even be larger than the full charging MEW of QB. This also leads to a much larger average charging power than that of QB with TAB in a short-time charging process. These features suggest that with the help of quantum coherence of CAB it becomes feasible to switch the charging schemes between the long-time slow charging protocol with large capacity and high efficiency and the short-time rapid charging protocol with highly charging power only by adjusting the coupling strength of QB-ancilla. This work clearly demonstrates that the quantum coherence of bath can not only serve as the role of “fuel” of QB to be utilized to improve the QB’s charging performance but also provide an alternative way to integrate the different charging protocols into a single QB.

The effects of stochastic perturbations and periodic excitations on the eutrophicated lake ecosystem are explored. Unlike the existing work in detecting early warning signals, this paper presents the most probable transition paths to characterize the regime shifts. The most probable transition paths are obtained by minimizing the Freidlin–Wentzell (FW) action functional and Onsager–Machlup (OM) action functional, respectively. The most probable path shows the movement trend of the lake eutrophication system under noise excitation, and describes the global transition behavior of the system. Under the excitation of Gaussian noise, the results show that the stability of the eutrophic state and the oligotrophic state has different results from two perspectives of potential well and the most probable transition paths. Under the excitation of Gaussian white noise and periodic force, we find that the transition occurs near the nearest distance between the stable periodic solution and the unstable periodic solution.

The correlation between the optical Kerr effect (OKE) spectroscopy of supercooled water at ambient pressure and its structural tetrahedrality was investigated by contrasting simulation results of two non-polarizable water models modified with the same collective polarizability, which involves intrinsic molecular polarizability and induced polarizability arising from interactions between molecular dipoles. The tetrahedrality of water structure was typified with the second-peak maximum in the pair distribution function of oxygens and the fraction of molecules, which and their neighbours up to the second hydration shell all have four H-bond coordinators. Our results indicate that the intermolecular vibrational band in the OKE spectrum of supercooled water is considerably correlated to its structural tetrahedrality.

We analytically and numerically study the local dynamical characteristics of the Bessel beams reflected from an air—glass interface near the Brewster angle. A Taylor series expansion based on the angular spectrum component is applied to correct the reflection coefficients near the Brewster angle. Using a hybrid angular spectrum representation and vector potential method, the explicit expressions for the electric and magnetic field components of the reflected Bessel beams are derived analytically under paraxial approximation. The local energy, momentum, spin, and orbital angular momentum of the Bessel beams upon reflection near the Brewster angle are examined numerically by utilizing a canonical approach. Numerical simulation results show that the properties of these dynamical quantities for the Bessel beams near Brewster angle incidence change abruptly, and are significantly affected by their topological charge, half-cone angle, and polarization state. The present study has its importance in understanding the dynamical aspects of optical beams with vortex structure and diffraction-free nature during the reflection process.

At present, direct-combustion of lignite for generating electricity is a meaningful way to utilize lignite. The development status of lignite power generation and lignite CFB boiler technology is introduced in this paper. From the aspects of combustion stability, boiler efficiency and pollutant discharge, the technical and economic comparative analysis of lignite power generation technology of pulverized coal boiler and CFB boiler is carried out. As a result, CFB boilers burning lignite have more advantages than pulverized coal boilers in combustion stability, boiler efficiency, and pollutant emission reduction. The development of 600-1000MW ultra-supercritical CFB boiler units burning high moisture lignite is feasible and has certain strategic advantages.

With the introduction of ultra-low emission environmental protection policies in national and local coal-fired power plants, ultra-low emission transformation of coal-fired power plants is required to be carried out in an all-round way. Under this background, the first 600 MW supercritical circulating fluidized bed (SCCFB) boiler unit in the world have carried out the demonstration of the technical route of ultra-low emission transformation and the research of key technologies. By adopting limestone desulphurization and low nitrogen combustion in furnace, selective non-catalytic reduction (SNCR) technology outside furnace and the integrated desulfurization and dust removal process of flue gas circulating fluidized bed (CFB-FGD), the unit realizes the technical route of ultra-low emission, and has good investment and operation economy, which can adapt to the development trend of environmental protection in the future. The CFB-FGD and dust removal system can further improve the operation economy of the boiler by setting pre-electrostatic precipitator (pre-ESP), designing double-tower and optimizing the single-tower switching mode, optimizing the pressure margin of the induced draft fan, and adopting the coordinated desulphurization operation mode inside and outside the furnace. The research results can provide a reference for the selection of ultra-low emission transformation for 660MW ultra-supercritical CFB boiler unit.

Resonance effects caused by the photon–electron interaction are a focus of attention in semiconductor optoelectronics, as they are able to increase the efficiency of emission. GaN-on-silicon microdisks can provide a perfect cavity structure for such resonance to occur. Here we report GaN-based microdisks with different diameters, based on a standard blue LED wafer on a Si substrate. A confocal photoluminescence spectroscopy is performed to analyze the properties of all microdisks. Then, we systematically study the effects of radial modes and axial modes of these microdisks on photon–electron coupling efficiency by using three-dimensional finite-difference time-domain simulations. For thick microdisks, photon–electron coupling efficiency is found to greatly depend on the distributions of both the radial modes and the axial modes, and the inclined sidewalls make significant influences on the axial mode distributions. These results are important for realization of high-efficiency resonant emission in GaN-based microcavity devices.

Square microdisks with round corners are fabricated using a standard GaN-based blue LED on Si substrates. Whispering gallery-like modes in the square microdisks are investigated by finite-difference time-domain simulation. The simulation results reveal that the round corners in square microdisks can substantially suppress the number of light propagation paths and further reduce the number of optical modes. A confocal micro-photoluminescence is performed to analyze the optical properties of the square microdisks at room temperature. The single-mode dominant resonant emission is obtained in the square microdisk with corner radius of 1.5 μm.

The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (∼ 1020 cm−3) grown by metal–organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (VIII complex)1− as well as V N 3 + and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al x Ga1 − x N (x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2 × 1018 cm−3 and 3.3 × 1017 cm−3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

With the rapid development of Railway Construction in China, the safety of railway trains has aroused people’s concern while solving the traffic problems of passenger flow in various cities. According to the principle of relative motion, this experiment studies the fire burning characteristics of trains at different travel speeds by changing the wind turbine frequency to adjust the wind speed. The experimental results show that when the train window breaks during travel, the fire heat release rate increases with the increase of running speed. The growth coefficient of fire increases with the increase of running speed. With the increase of train running speed, the variation of the temperature extremes of the ceiling and the temperature series on both sides of the fire source is not very large.

Power-split transmission system was very complex in structure; the continuously variable transmitting performance of this system is difficult to analysis, which impeded the further research of this kind of transmission. In this research, universal series mathematical models of power-split transmission system were set up firstly. Then, the lever analogy analysis method was introduced into the power-split transmission performance analysis process, and the multi-range continuously variable transmitting performance of power-split transmission was described comprehensive. Finally, the method was used to analysis one real power-split transmission systems, ZF Friedrichshafen power, and the accuracy, validity and convenience of this method were verified. The result show that the method of mathematical model combine with lever analogy could analysis the power-split transmission system continuously variable transmitting performance more correctly, easily and rapidly, it could provide a more intuitive and efficiently analysis method for the further research of power-split transmission system.

The development background of the ultra micro as a starting point,the construction of an ultra micro environmental are analyzed, the pilot micro over the layout of the service function of positioning, the SLP and internal operation unit mutual relationship analysis method of pilot of an ultra micro location, location layout, internal environment were analysis and design, through the establishment of distribution center to solve the distribution of the micro - expansion stage, route optimization problem, by center of gravity method combined with practice of distribution center location, distribution center management process optimization, carried on the design to the information system. Through a series of methods for the final completion of micro super logistics system integration design.

With the vigorous development of Internet economy, this paper analyzes the performance of macro logistics in the Internet Era and current situation of micro logistics such as "last mile" "Cloud computing". Combined with Jingdong Mall self-run logistics mode and the implementation of the Green hand logistics network, we proposed to classify logistics by "multimodal transport" "LTL transport". The development of multimodal transport is guided by the pattern of Europe and America. The combination of Amiba model with LTL transport is proposed. It is concluded that the innovation development is the highlight of the logistics industry, which leads the development of the industry.

Two-inch Ga2O3 films with ( )-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga2O3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.

In this paper, we report on the switching kinetics characteristics of interface traps in n-metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs) with ultra-narrow channels. By analyzing the gate bias voltage and temperature dependence of the transition time and amplitude of the random telegraph signals (RTSs), it has been demonstrated experimentally that a thermally activated process may be dominant for Coulomb-repulsive centers and quantum mechanical tunneling is a favored process to Coulomb-attractive centers. The anomalous switching behaviors of RTSs having very large amplitude are well explained by the quantum mechanical tunneling model.

Structural characteristics of AlN epilayer were investigated by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM); the epilayer was grown on GaN/sapphire substrates using a high-temperature AlN interlayer by metal organic chemical vapor deposition technique. The mosaic characteristics including tilt, twist, heterogeneous strain, and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map (RSM). According to Williamson–Hall plots, the vertical coherence length of AlGaN epilayer was calculated, which is consistent with the thickness of AlGaN layer measured by cross section TEM. Besides, the lateral coherence length was determined from RSM as well. Deducing from the tilt and twist results, the screw-type and edge-type dislocation densities are 1.0 and 1.8, which agree with the results observed from TEM.

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2-methoxy-5-(2-ethyl)hexoxy-1,4-phenylenevinylene] (MEH-PPV)/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-efficiency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescence (PL) spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.

Chebyshev segmentation method was used to discretize the time period contained in delay differential equation, then the Newton second-order difference quotient method was used to calculate the cutter motion vector at each time endpoint, and the Floquet theory was used to determine the stability of the milling system after getting the transfer matrix of milling system. Using the above methods, a two degree of freedom milling system stability issues were investigated, and system stability lobe diagrams were got. The results showed that the proposed methods have the following advantages. Firstly, with the same calculation accuracy, the points needed to represent the time period are less by the Chebyshev Segmentation than those of the average segmentation, and the computational efficiency of the Chebyshev Segmentation is higher. Secondly, if the time period is divided into the same parts, the stability lobe diagrams got by Chebyshev segmentation method are more accurate than those of the average segmentation.

Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.

By using a simple method to factorize the recursion operator, the inverse recursion operator of the variable coefficient KdV equation is exhibited explicitly. Three new sets of symmetries of the variable coefficient KdV equation are given in addition to the known K symmetries and τ symmetries. Starting from these three sets of symmetries, we obtained three hierarchies of the variable coefficient KdV integro-differential equations.

A novel fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology. This growth method is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaN nanorods with a relatively high purity and at a low cost. X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy are used to characterize the as-synthesized nanorods. The results show that most of the nanorods consist of a main rod and a top curved thread. It is single-crystal GaN with hexagonal wurtzite structure. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 370.8 nm. Furthermore, a possible two-stage growth mechanism of the fishing rod-shaped GaN nanorod is also briefly discussed.

Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 108 cm−2 were demonstrated and controlled by the thickness of Ni film and the NH3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.

We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well (MQW) nanorod arrays with high internal quantum efficiency. The InGaN/GaN MQWs are grown by metalorganic chemical vapor deposition on c-plane sapphire substrates, and then the MQW nanorod arrays are fabricated by using inductively coupled plasma etching with self-assembled Ni nanoparticle mask with low-damage etching technique. The typical diameter of the nanorods is from 200 nm to 300 nm and the length is around 800 nm, which almost is dislocation free. At room temperature, an enhancement of 3.1 times in total integrated photoluminescence intensity is achieved from the MQW nanorod arrays, in comparison to that of the as-grown MQW structure. Based on the temperature-dependent photoluminescence measurements, the internal quantum efficiency of the nanorod structure is 59.2%, i.e., 1.75 times of as-grown MQW structure (33.8%). Therefore, the nanorod structure with a significant reduction of defects can be a very promising candidate for highly efficient light emitting devices.

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film, followed by a low damage dry etching process, a p-side-up LED with a roughened surface has been fabricated. Compared to a conventional LED with plane surface, the light output of LEDs with nanoporous p-GaN surface increases up to 71% and 36% at applied currents of 1 mA and 20 mA, respectively. Meanwhile, the electrical characteristics are not degraded obviously after surface roughening.

The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied. The samples were etched by inductively coupled plasma (ICP) etching via a self-assembled nickel nanomask, and examined by room-temperature photoluminescence measurement. The key parameters in the etching process are rf power and ICP power. The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3 W to 100 W. However, it is slightly influenced by the ICP power, which shows 30% variation over a wide ICP power range between 30 W and 600 W. Under the optimized etching condition, the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample, and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.

InxGa1−xN alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23). The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A1 (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1−xN samples, a linear dependence of the A1 (LO) mode frequency is obtained: Ω0(x) = (740.8 ± 3.3) − (143.1 ± 16.0)x, which is the evidence of one-mode behavior in InxGa1−xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.

Homo-epitaxial layers are successfully grown on Si-face 4° off-axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I—V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.

Blue-red complex light emitting InGaN/GaN multi-quantum well (MQW) structures are fabricated by metal organic chemical vapor deposition (MOCVD). The structures are grown on a 2-inch diameter (0001) oriented (c-face) sapphire substrate, which consists of an approximately 2-μm-thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer. The surface morphology of the MQW structures is observed by an atomic force microscope (AFM), which indicates the presence of islands of several tens of nanometers in height on the surface. The high resolution x-ray diffraction (XRD) θ/2θ scan is carried out on the symmetric (0002) of the InGaN/GaN MQW structures. At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region. Besides the 364 nm GaN band edge emission, two main emissions of blue and amber light from these MQWs are found, which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.

High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “freely” with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance G m, conductance G ds, G m/I d, mismatching (MM) behavior, flicker noise (1/f noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., I on–I off, I off–V tsat, DIBL, C jswg) and reliability (HCI) have also shown the comparability of HPA devices over control.

AlGaN/GaN-based planar Schottky barrier diodes with various spacings between ohmic and Schottky contacts are fabricated without any edge termination. The reverse leakage current of the devices quickly saturates at low reverse bias when the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface is fully depleted. The corresponding breakdown voltage is found to follow a linear dependence on contact spacing and exceeds 1100 V at a contact spacing of 20 μm, yielding a high V2BR/RON value of > 280 MWcm−2. The observations are tentatively explained by a "natural super-junction" theory, in which ionized surface states at front surface of the AlGaN barrier have to be neutralized by reverse surface leakage current from the Schottky electrode.