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Detection of heavy metals such as Pb+2 is critical due to their high toxicity as even trace amounts of them pose a serious detrimental risk to human health. Pb2+ is one of the major toxic and persistent pollutants generated from industry and commonly found in soil, drinking water, and aquatic environments. Due to its high-mobility and one-atom thickness, graphene (Gr) based materials have shown great potential for chemical sensors of heavy metals. Recently, a novel conductive reduced-GO obtained by chemical vapor deposition (CVD-rMGO) showed improved layering structure and conductivity over conventional rGO based on chemically exfoliated flakes. Herein, utilizing this novel rGO obtained from chemical vapor deposition, we showed improved Pb2+ detection using both electrochemical and conductivity sensing. For electrochemical sensing, a CVD-rMGO film is used as working electrode and cyclic voltammetry is used to detect Pb+2 ions accumulated on the CVD-rMGO, obtaining a sensitivity of 4.6 nA nM−1cm−2 and a calculated limit of detection of 0.21 nM. For electrical sensing, the drain current through a CVD-rMGO was monitored as the film as exposed to different concentrations of Pb+2, reaching an estimated limit of detection of 0.101 nM. This work shows that high-quality reduced graphene oxide produced by chemical vapor deposition can serve as a basis enable high-sensitivity detectors of Pb2+.

Understanding the behavior of water-immersed membranes in the megahertz range is critical to develop novel acoustic metamaterials compatible with biomedical ultrasound applications. Herein, we study the influence of water on the resonance frequency and quality factor near the megahertz range of silicon nitride membranes fully immersed in water using laser Doppler vibrometry. The resonance frequency of silicon nitride membranes significantly decreases in water compared to air. For a 40 µm wide membrane, the resonance frequency is reduced from 11.2 MHz in air to 1.24 MHz after immersion in water, which is confirmed by finite element method simulations. Our results indicate that the water mass loading plays a major role in the resonance frequency reduction, with a ratio of water mass to membrane mass of m w a t e r / m m e m b r a n e ∼ 102 and NAVMI factors of Γ∼1.3. We attribute the main losses to acoustic radiation with small contributions from viscous damping. We estimate that silicon nitride membranes with widths below 50 µm are required to build negative metamaterials operating above 1 MHz. The large NAVMI factors suggest strong coupling between membrane motion and acoustic waves in water, which is important to develop metamaterials able to manipulate acoustic fields.

The standard lithographic techniques to fabricate electronic components involve the use of polymers, baking steps and chemicals. This typically restricts their application to flat substrates made up of standard materials. Stencil lithography has been proposed as a stable alternative to the standard lithographic techniques. In this paper, we demonstrate the completely resistless all-through-stencil fabrication of electronic components, by performing all essential fabrication steps—implantation, etching and metallization—using stencil lithography. This is performed on a planar substrate as well as on pre-patterned 3D substrates, thus showing the potential of this technique for applications in the field of accelerometers, pressure, gas and radiation sensors.

A quantitative analysis of blurring and its dependence on the stencil-substrate gap and the deposition parameters in stencil lithography, a high resolution shadow mask technique, is presented. The blurring is manifested in two ways: first, the structure directly deposited on the substrate is larger than the stencil aperture due to geometrical factors, and second, a halo of material is formed surrounding the deposited structure, presumably due to surface diffusion. The blurring is studied as a function of the gap using dedicated stencils that allow a controlled variation of the gap. Our results show a linear relationship between the gap and the blurring of the directly deposited structure. In our configuration, with a material source of approximately 5 mm and a source-substrate distance of 1 m, we find that a gap size of approximately 10 microm enlarges the directly deposited structures by approximately 50 nm. The measured halo varies from 0.2 to 3 microm in width depending on the gap, the stencil aperture size and other deposition parameters. We also show that the blurring can be reduced by decreasing the nominal deposition thickness, the deposition rate and the substrate temperature.

The hydrogen sensing characteristics of a single nanotrench fabricated by focused ion beam milling (FIB) in an evaporated palladium microwire are presented. In situ atomic force microscopy (AFM) measurements proved that, in the presence of H(2), the trench closes and electrically connects the initially separated parts of the wire due to the increase in volume of the material. Therewith, an electrical current can be switched through the wire. With experiments under various H(2) concentrations and a mathematical model, we describe the closing mechanism of the trench with respect to various parameters, including the substrate material, film thickness, trench size and wire dimensions. Results have been compared with those from equivalent continuous wires. Thin SiO(2) and polyimide (PI) layers on silicon were used to study the effect of substrate elasticity. Sufficient lateral expansion of Pd to close trenches of up to 70 nm in width has only been observed on PI, which we attribute to its advantageous elastic properties. The scale of the response times allowed the observation of two superposing effects: the chemical conversion of Pd to PdH(x) and the mechanical closing of the trench.

We propose a new process for forming parallel nanobridge patterns by nanostencil lithography. In this process, a low-stress silicon nitride stencil with parallel nanobridge structures is fabricated by a new edge patterning technique where those nanobridges are formed simultaneously via sidewall features using the conventional photolithography and anisotropic dry etching process. After forming primary Cr patterns on the oxidized Si substrate by depositing Cr through the edge-patterned stencil, those patterns are transferred onto the underlying Si layer in a reversed manner, leading to the formation of parallel Cr nanobridge patterns on the Si substrate. Using this process, we have successfully produced 85 nm-wide parallel Cr nanobridge patterns from a stencil with 115 nm-wide nanobridge structures that was fabricated by conventional microlithography. As there is no need for advanced lithography techniques in preparing the nanobridge stencil, the combination of the edge patterning and reverse nanostencil process provides a cost-effective tool for the massive fabrication of parallel nanobridge arrays at the 100 nm scale.