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epl 120(1), 16003 (2017). doi:10.1209/0295-5075/120/16003, Using higher-order coherence of thermal light sources, the resolution power of standard x-ray imaging techniques can be enhanced. In this work, we applied the higher-order measurement to far-field x-ray diffraction and near-field phase contrast imaging (PCI), in order to achieve superresolution in x-ray diffraction and obtain enhanced intensity contrast in PCI. The cost of implementing such schemes is minimal compared to the methods that achieve similar effects by using entangled x-ray photon pairs., Published by IOP Publ., Les-Ulis

The event-by-event Monte Carlo model, TREKIS, was developed to describe the excitation of the electron subsystems of various solids by a penetrating swift heavy ion (SHI), the spatial spreading of generated fast electrons, and secondary electron and hole cascades. Complex dielectric function formalism is used to obtain relevant cross sections. This allows the recognition of fundamental effects resulting from the collective response of the electron subsystem of a target for excitation that is not possible within the binary collision approximation of these cross sections, e.g. the differences in the electronic stopping of an ion and in the electron mean free paths for different structures (phases) of a material. A systematic study performed with this model for different materials (insulators, semiconductors and metals) revealed effects which may be important for an ion track: e.g. the appearance of a second front of excess electronic energy propagation outwards from the track core following the primary front of spreading of generated electrons. We also analyze how the initial ballistic spatial spreading of fast electrons generated in a track turns to the diffusion ~10 fs after ion passage. Detailed time-resolved simulations of electronic subsystem kinetics helped in understanding the reasons behind enhanced silicon resistance to SHI irradiation in contrast to easily produced damage in this material by femtosecond laser pulses. We demonstrate that the fast spreading of excited electrons from the track core on a sub-100 fs timescale prevents the Si lattice from nonthermal melting in a relaxing SHI track.

Journal of physics / B 46(16), 164009(2013). doi:10.1088/0953-4075/46/16/164009, Here we propose a scheme for probing the outer-shell atomic energy levels within a laser-created nanoplasma, using photoelectron spectroscopy data obtained from the irradiation of the nanoplasma with an ultraintense 'probing' pulse from a soft x-ray free-electron laser. The proposed method can then detect shifts of outer-shell energy levels of an atom or an ion within a plasma, due to the effect of charged plasma environment on atomic potentials, known as the 'plasma screening effect'. Various theoretical models exist that estimate the magnitude of the screening effect. However, the first experimental data that can verify theoretical models have become available only recently (Vinko et al 2012 Nature 482 59). They were obtained with a hard x-ray-based experimental method which uses the information encoded in fluorescence spectra and is, therefore, restricted to deep atomic shells. Below, we show that our photoelectron spectroscopy method of probing a nanoplasma with a destructive, high-intensity soft x-ray pulse that brings the irradiated system to the regime of 'massively parallel' ionization (Gnodtke et al 2012 Phys. Rev. Lett. 108 175003) enables access to the information on the energy level (and ultimately energy level shift) of the valence orbital. In particular, the result of such a photoelectron spectroscopy experiment could help to clarify the discrepancy between the ion abundances in nanoplasmas observed during the recent high-harmonic-generation and free-electron-laser experiments with intense soft x-ray pulses., Published by IOP Publ., Bristol

The irradiation of semiconductors with ultrashort laser pulses causes excitation of electrons from bound states (the valence band and deep atomic shells) to the conduction band, which produces non-equilibrium highly energetic free electrons. We apply a Monte-Carlo simulation technique to study the ionization and excitation of the electronic subsystem of a solid silicon target irradiated with a femtosecond laser pulse, obtaining the transient distribution of electrons within the conduction band. We take into account the electronic band structure and Pauli's principle for excited electrons. Secondary excitation and ionization processes induced by electrons in the conduction band and holes in the valence band were also included and simulated event by event. The temporal distributions of the density and the energy of excited electrons are calculated and discussed. We demonstrate that, due to the energy used to overcome the ionization potential, the final kinetic energy of the free electrons is significantly less than the total energy provided by the laser pulse. We extend the concept of an 'effective energy gap' for multiple electronic excitations, which can be applied to estimate the free-electron density after high-intensity vacuum ultraviolet (VUV) laser pulse irradiation. The effective energy gap depends on both the properties of the material and the laser pulse parameters. The concept provides a fundamental understanding of the experimentally accessible pair creation energy measured in the limit of long times.

We study theoretically the electronic excitation within semiconductors under irradiation with an ultrashort VUV laser pulse as provided by the new free-electron laser FLASH in Hamburg, Germany. Applying Monte Carlo technique we obtain the transient distribution of the excited electrons within solid silicon. We find the statistical nature of an effective energy gap for multiple electronic excitation, providing the fundamental understanding of the experimentally accessible pair creation energy measured as a long time limit. Considering photoabsorbtion, impact ionizations and Coster-Kroning transitions, we estimate the pair creation energy and give a general formula to calculate the effective energy gap for semiconductors.