1. Concept and design of super junction devices
- Author
-
Ming Qiao, Zhan Zhenya, Bo Zhang, Zhaoji Li, and Zhang Wentong
- Subjects
010302 applied physics ,Physics ,020208 electrical & electronic engineering ,Doping ,02 engineering and technology ,Substrate (electronics) ,Condensed Matter Physics ,Topology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Electric field ,0103 physical sciences ,Limit (music) ,0202 electrical engineering, electronic engineering, information engineering ,Materials Chemistry ,Power semiconductor device ,Electrical and Electronic Engineering ,Power MOSFET - Abstract
The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of Ron∝VB2.5, showing a quasi-linear relationship of Ron∝VB1.03.
- Published
- 2018