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The effects of rapid thermal annealing (RTA) performed after source/drain (S/D) implantation on the characteristics of complementary metal-oxide-semiconductor (CMOS) transistors with a TiN metal gate were investigated thoroughly. It was shown that n-channel devices require a higher thermal budget in order to reduce junction leakage, compared to p-channel devices. It was also found that the flat-band voltage and oxide thickness are both affected by the annealing temperature, particularly for p-channel devices. In n-channel devices, the gate leakage current level is highly dependent on channel length and RTA temperatures. Further analysis indicated that the agglomeration phenomenon during the high-temperature RTA step occurs more easily as the metal gate length becomes narrower. When this happens, gate oxide integrity is degraded, resulting in an increased gate leakage of n-channel transistors.

A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (~ 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 109) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor (CMOS)-like devices.

In this paper, we report the use of shallow germanium halo doping on improving the short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV) germanium large-angle-tilt implant (LATID), V th lowering in short-channel transistors is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose (e.g., 5×1012 cm-2) is also found to effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be minimized by the shallow low-dose implant used in this study.