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In the present study, the performance parameters of GaAsN dilute nitride-based semiconductor solar cell with and without AlGaAs blocking layers have been investigated in detail by Solar Cell Capacitance Simulator in one dimensional software program (SCAPS-1D). The thickness of absorber, buffer, and blocking layers are varied to achieve the improvement of open circuit voltage, short circuit current, fill factor, efficiency and also to optimize the device structure. The impact of doping and defect densities on the solar cell performance parameters have been analyzed minutely inside the absorber, buffer, and blocking layers. The solar cell thermal stability parameters are also investigated in the temperature region from 273K to 373K. The efficiency of 43.90% and 40.05% are obtained from the proposed solar cells with and without AlGaAs blocking layer, respectively. The present findings may provide insightful approach for fabricating feasible, cost effective, and efficient dilute nitride solar cell.

This research article demonstrates a good simulation result for identifying and detecting various industrial chemicals in a Terahertz (THz) waveguide with a new heptagonal, five layers of heptagonal photonic fiber elliptic form, heptagonal cladding shape (H-PCF). COMSOL 4.2 software based on finite element (FEM) methods and perfectly matched layers check our composition (PML). The different chemicals are also differentiated and identified by each other in different parameters H-PCF fibers show a high relative sensitivity of ethanol of approximately 86.50 percent after numerical analysis, Benzene around 89.35%, and water around 85.15% at a frequency of around 0.7 THz. In our experiment, we obtained very low confinement losses at 1 terahertz (THz) such as 5.95 × 10−08 dB/m for Ethanol 6.67 × 10−08 dB/m for Benzene, and 5.80 × 10−08 dB/m for water. Regarding these results, we can strongly recommend that our proposed heptagonal photonic crystal fiber (H-PCF) will be more congenial in biomedical, bio-medicine, and industrial areas for the identification and detection of various types of chemicals with the help of a THz waveguide.

Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs quantum dot (QD) structures have been studied by two-wavelength-excited photoluminescence (PL). The PL intensity quenching of GaAs and QD emissions due to the addition of a below-gap excitation light of 0.80 eV energy indicates the presence of defect levels acting as NRR centers. The method enables us to discuss the distribution of NRR centers in GaAs and/or InAs QD regions by selecting either conduction band excitation (2.33 eV) or intermediate band excitation (1.27 eV). We have found that the densities of NRR centers in GaAs layers and the effect of quenching on GaAs emissions increase monotonically with increasing proton irradiation fluence. The QD emission intensity, however, increases at a moderate fluence of 7 × 1011 protons/cm2 owing to the defect-assisted trapping of electrons into QDs. Further incorporation of NRR centers after 4 × 1012 protons/cm2 fluence quenches the QD-PL intensity below that of an unirradiated sample.