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In the present paper, the linear Eliashberg equation is converted into a new integral equation and from it, the following Tc formula is derived analytically in the weak coupling limit:, where ln γ=C=0.5772 is the Euler constant.

We extend previous theoretical work to predict the derivatives with respect to the 100 uniaxial stress of the substitutional deep point defect energy levels in GaP and GaAs which, for a defect at a specific site producing a level of particular symmetry, can be evaluated as a function of their energy levels in the band gap.