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A new expression of the scintillation index (SI) for a Gaussian-beam wave propagating through moderate-to-strong non-Kolmogorov turbulence is derived, using a generalized effective atmospheric spectrum and the extended Rytov approximation theory. Finite inner and outer scale parameters and high wave number “bump” are considered in the spectrum with a generalized spectral power law in the range of 3–4, instead of the fixed classical Kolmogorov power law of 11/3. The obtained SI expression is then used to analyze the effects of the spectral power law and the inner scale and outer scale on SI under various non-Kolmogorov fluctuation conditions. These results will be useful in future investigations of optical wave propagation through atmospheric turbulence. [ABSTRACT FROM AUTHOR]

We demonstrate that the GaAs/AlGaAs nanowires (NWs) ensemble is fabricated into photo-detectors. Current–voltage (I–V) characteristics are measured on GaAs/AlGaAs core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from cm to cm. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications. [ABSTRACT FROM AUTHOR]

To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from cm to cm. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime. [ABSTRACT FROM AUTHOR]