18 results on '"Lau, Wai"'
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2. Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide
3. Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 µm Dual Gate Oxide CMOS Technology
4. Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
5. Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length
6. An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants
7. The Superiority of N 2O Plasma Annealing over O 2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta 2O 5) Films
8. The Development of a Highly Selective KI/I2/H2O/H2SO4 Etchant for the Selective Etching of Al0.3Ga0.7As over GaAs
9. Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
10. Evidence that N2O is a Stronger Oxidizing Agent than O2 for the Post-Deposition Annealing of Ta2O5 on Si Capacitors
11. A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy
12. A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
13. Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications
14. Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
15. Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer
16. Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
17. Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling Probabilities
18. The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
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