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This paper systematically introduces a three-dimensional transmission and transformation engineering auxiliary design software, and analyses its function, structure and technical characteristics. The main feature of this software is that it has a relatively powerful three-dimensional auxiliary design capability, which can help designers quickly generate a three-dimensional model of power transmission and transformation projects. The three-dimensional model can not only give the project investor an overall image and visual effect of the project during the design bidding stage, but also serve as a reference for the design of the relevant drawings in the later period. At the same time, after having an accurate model, the designer can verify the correctness and reliability of the design, can directly obtain some spatial information, and can dynamically modify, adjust and verify the model as needed. The software also provides related information statistics, query, modification, retrieval and other functions, and provides corresponding drawing management tools according to drawing management specifications. (With the actual application of the system, the design level and technical capabilities of designers will be further improved to ensure that the design work can be completed with high quality and efficiency.

In this paper, we find that topological insulators with time-reversal symmetry and inversion symmetry featuring two-dimensional quantum spin Hall (QSH) state can be divided into 16 classes, which are characterized by four Z2 topological variables ζk = 0, 1 at four points with high symmetry in the Brillouin zone. We obtain the corresponding edge states for each one of these sixteen classes of QSHs. In addition, it is predicted that massless fermionic excitations appear at the quantum phase transition between different QSH states. In the end, we also briefly discuss the three-dimensional case.

This paper presents a three-dimensional particle-in-cell (PIC) simulation of a Ka-band relativistic Cherenkov source with a slow wave structure (SWS) consisting of metal photonic band gap (PBG) structures. In the simulation, a perfect match layer boundary is employed to absorb passing band modes supported by the PBG lattice with an artificial metal boundary. The simulated axial field distributions in the cross section and surface of the SWS demonstrate that the device operates in the vicinity of the π point of a TM01-like mode. The Fourier transformation spectra of the axial fields as functions of time and space show that only a single frequency appears at 36.27 GHz, which is in good agreement with that of the intersection of the dispersion curve with the slow space charge wave generated on the beam. The simulation results demonstrate that the SWS has good mode selectivity.

We report the first-principles linear response calculations on lattice dynamics and electron-phonon coupling (EPC) of superhard material RuB2. Phonon frequencies and eigenvectors are obtained throughout the whole Brillouin zone. The calculated EPC parameters for the optical phonon modes at Γ indicate that the d electrons of transition metal play the most important role in deciding the superconducting behaviour, and there are sizeable contributions from B p electrons to EPC. Our calculated EPC constant is 0.41, and the estimated superconducting transition temperature Tc is 1.6K using the Coulomb pseudopotential μ* = 0.12, in excellent agreement with the experimental ones.

The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial state after long-time storage.

The scanning tunnelling microscopy (STM) images of isolated iron phthalocyanine (FePc), cobalt phthalocyanine (CoPc), nickel phthalocyanine (NiPc) and copper phthalocyanine (CuPc) are simulated theoretically. All the simulated STM images show submolecular structures and reproduce well the features of the experimental images. The results show that there is a strong dependence of the STM images on the ion valence configuration of the metal ion. At the small tip bias voltages of less than 0.5 V, the central metal ions in NiPc and CuPc appear as holes in the molecular images, while they are the highlighted bumps in FePc and CoPc. The simulated images are interpreted by the fact that both FePc and CoPc systems have a significant dz2 character near the Fermi level while the NiPc and CuPc systems do not. Moreover, we predict that the central nickel ion for NiPc appears as a highlighted point when the tip bias voltage is larger than 0.7 V.

Relative absorption intensities of the Fermi resonance polyads of isolated C-H chromophore for the CHCl3 molecule are calculated by one-dimensional dipole moment surface which had been obtained by the ab initio density functional method B3PW91 with 6-311++G(3df, 2pd) basis set, and agree very well with the experimental results. It is shown that the nonlinearity of the dipole moment surface in the vicinity of the equilibrium configuration is responsible for the intensities anomaly, i.e. the unusual strong intensities of the second Fermi resonance polyad.

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

A superparamagnetic reduced graphene oxide-Fe(3)O(4) hybrid composite (rGO-Fe(3)O(4)) was prepared via a facile and straightforward method through the solvothermal reaction of iron (III) acetylacetonate (Fe(acac)(3)) and graphene oxide (GO) in ethylenediamine (EDA) and water. By this method, chemical reduction of GO as well as the formation of Fe(3)O(4) nanoparticles (NPs) can be achieved in one step. The Fe(3)O(4) NPs are firmly deposited on the surfaces of rGO, avoiding their reassembly to graphite. The rGO sheets prevent the agglomeration of Fe(3)O(4) NPs and enable a uniform dispersion of these metal oxide particles. The size distribution and coverage density of Fe(3)O(4) NPs deposited on rGO can be controlled by varying the initial mass ratio of GO and iron precursor, Fe(acac)(3). With an initial mass ratio of GO and Fe(acac)(3) of 5:5, the surfaces of rGO sheets are densely covered by spherical Fe(3)O(4) NPs with an average size of 19.9 nm. The magnetic-functionalized rGO hybrid exhibits a good magnetic property and the specific saturation magnetization (M(s)) is 13.2 emu g(-1). The adsorption test of methylene blue from aqueous solution demonstrates the potential application of this rGO-Fe(3)O(4) hybrid composite in removing organic dyes from polluted water.

We study a two-stream backward-wave oscillator with a slot-hole structure at short millimeter waves with the help of a three-dimensional particle-in-cell simulation. In order to increase the interaction region of the electron beam, the efficiency and the output power, a slot-hole loaded rectangular waveguide structure used as the high-frequency system is proposed. Based on the mechanism of the backward-wave oscillator, a slow-wave oscillator with a frequency of 0.14 THz is designed. The simulations show that the output power and the efficiency of the oscillator can be enhanced due to the coupling between the two beams through the slot holes. The interaction efficiency is 5.18%, and the starting current density is below 5 A · cm−2 for the two beams. These attractive results indicate that, based on the two-stream backward-wave oscillator, we can get short millimeter wave sources with high power and low current density.

This paper studies dispersion characteristics of the transverse magnetic (TM) mode for two-dimensional unmagnetized dielectric plasma photonic crystal by a modified plane wave method. First, the cutoff behaviour is made clear by using the Maxwell–Garnett effective medium theory, and the influences of dielectric filling factor and dielectric constant on effective plasma frequency are analysed. Moreover, the occurence of large gaps in dielectric plasma photonic crystal is demonstrated by comparing the skin depth with the lattice constant, and the influence of plasma frequency on the first three gaps is also studied. Finally, by using the particle-in-cell simulation method, a transmission curve in the Γ – X direction is obtained in dielectric plasma photonic crystal, which is in accordance with the dispersion curves calculated by the modified plane wave method, and the large gap between the transmission points of 27 GHz and 47 GHz is explained by comparing the electric field patterns in particle-in-cell simulation.