Search

An analytical method based on four-wave mixing (FWM) is here developed to study the generation of entangled state in an asymmetric semiconductor double quantum well structure. It is found that the maximally entangled state of two beams (the probe and four-wave mixing beams) can be achieved in an appropriate condition. Moreover, we also show that the two entangled beams propagate with ultraslow group velocity in the semiconductor medium. This investigation can be used for achieving the entangled beams in the semiconductor solid-state medium, which is much more practical than that in an atomic medium because of its flexible design and the wide adjustable parameters.

We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity Vg/c ~ ? 10?3. Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.

We investigate the geometric phase and dynamic phase of a two-level fermionic system with dispersive interaction, driven by a quantized bosonic field which is simultaneously subjected to parametric amplification. It is found that the geometric phase is induced by a counterpart of the Stark shift. This effect is due to distinct shifts in the field frequency induced by interaction between different states (|e and |g) and cavity field, and a simple geometric interpretation of this phenomenon is given, which is helpful to understand the natural origin of the geometric phase.

We theoretically investigate optical bistability (OB) and multistability (OM) behaviour of a closed-loop configuration atomic system driven by a degenerate coupling field and a degenerate probe field inside a unidirectional ring cavity. It is found that the OB and OM behaviour can be controlled by adjusting the intensity and the frequency detuning of the coupling field, respectively. Interestingly, our numerical results show that it is easy to realize the transition from OB to OM or vice versa by adjusting the intensity of the coupling field under a appropriate frequency detuning. The effect of the atomic cooperation parameter on the OB behaviour is also discussed.

We theoretically investigate optical bistability (OB) behaviour in a four-level atomic system confined in a unidirectional ring cavity. It is shown that OB can be controlled by adjusting the intensity of the coupling field and the value of the cooperativity parameter. More importantly, our numerical results show that the threshold intensity of OB can be reduced without decreasing the range of the hysteresis loop via adjusting the effect of spontaneously generated coherence (SGC) or the relative phase between two applied fields. The influence of the frequency detuning of the coupling field on the OB behaviour is also discussed.

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

90-nm T-shaped gate InP-based In0.52Al0.48As/In0.6Ga0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2 × 30 μm, a source—drain space of 2.5 μm, and a source—gate space of 0.75 μm. DC, RF and small-signal model characterizations were demonstrated. The maximum saturation current density was measured to be 755 mA/mm biased at Vgs = 0.6 V and Vds = 1.5 V. The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at Vgs = −0.1 V and Vds = 1.5 V. The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz, respectively. The inflection point (the stability factor k = 1) where the slope from −10 dB/decade (MSG) to −20 dB/decade (MAG) was measured to be 83 GHz. The small-signal model of this device was also established, and the S-parameters of the model are consistent with those measured from 0.5–110 GHz.

By using a two-mode mean-field approximation, we study the dynamics of the microcavities containing semiconductor quantum wells. The exact analytical solutions are obtained in this study. Based on these solutions, we show that the emission from the microcavity manifests periodic oscillation behaviour and the oscillation can be suppressed under a certain condition.

We propose a new scheme to achieve the tripartite entanglement based on the standard criteria [Phys. Rev. A 67 (2003) 052315] in a inverse-tripod atomic system. In our scheme, the atomic coherence is introduced by two microwave fields which drive the upper three levels of atom. By numerically simulating the dynamics of system, we investigate the generation and evolution of entanglement in the presence of atom and cavity decay. As a result, the present research provides an efficient approach to achieve fully tripartite entanglement with different frequencies and initial states for each entangled mode, which may have impact on the progress of multicolored multi-notes quantum information networks.