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In this paper, we report a preliminary study on the electrical and optical properties of the first P-on-N SiPM prototype developed at KAIST with a collaboration of NNFC. The sensors were fabricated on a 200 mm n-type silicon epitaxial-layer wafer via customized CMOS process at NNFC. Measurements on the reverse current were carried out on a wafer-level with an auto-probing station and breakdown voltage was found as 32.3 V. As for optical characterization, gain, dark count rate, and photon detection efficiency have been measured as a function of bias voltage at room temperature. In particular, we show that the device had a comparable gain of ~ 106 with respect to conventional PMTs and had a peak sensitivity in blue light regime. Furthermore, we attempt to explain possible causes of some of phenomena seen from the device characterization.

The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a TubeFET into charge traps on the surface of the SiO2 gate dielectric, thus shifting the threshold voltage. This memory can be written and erased many times, and has a hold time of hundreds of seconds at room temperature. At second we have attempted to make a Peapod tubeFET. It is the structure that a C60 was contained within the tube and separated from it by a graphitic Van der Waals gap. I–V property of the Peapod shows semiconducting property.