18 results on '"Kamata, Isaho"'
Search Results
2. Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
3. Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC
4. Suppressed expansion of single Shockley stacking faults at narrow widths in 4H-SiC
5. X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition
6. Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence
7. High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method
8. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
9. Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers
10. X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC
11. Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
12. Epitaxial Growth of a Low-Doped 4H-SiC Layer on a Micropipe Stop Layer
13. Influence of 4H-SiC Growth Conditions on Micropipe Dissociation
14. Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation
15. Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
16. Si–H Bonds on the 6H–SiC(0001) Surface after H2 Annealing
17. Chemical States of Crystalline Silicon Carbide Surfaces
18. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.