1. In situhydrogenation of visible a-SiC:H-based p - i - n type thin-film light-emitting diodes using the photochemical vapour deposition method
- Author
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Jongwook Lee and Koeng Su Lim
- Subjects
Chemistry ,Analytical chemistry ,Substrate (electronics) ,Electroluminescence ,Condensed Matter Physics ,Photochemistry ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Materials Chemistry ,Ultraviolet light ,Irradiation ,Electrical and Electronic Engineering ,Thin film ,Layer (electronics) ,Deposition (law) ,Light-emitting diode - Abstract
The effects of in situ hydrogenation on the performance of visible a-SiC:H-based p - i - n type thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated with a photochemical vapour deposition method. In the process of TFLED fabrication, with a stream of of 50 sccm and ultraviolet light irradiation at a substrate temperature of and a process pressure of 0.3 Torr for 30 min, in situ hydrogenation was performed at the base of a p layer with various thicknesses of i-a-SiC:H layers (0, 10, 20 and 30 nm). It was found that the performance of visible TFLEDs was dramatically improved by in situ hydrogenation. With in situ hydrogenation after deposition of the 30 nm thick luminescently active i-a-SiC:H layer, the threshold voltage was decreased by about 2 V, the electroluminescence peak shifted from 680 nm to 625 nm and the brightness increased from to .
- Published
- 1996