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A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge (ESD) protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35μm 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.

Thispaperdescribesan8-bit125MHzlow-powerCMOSfully-foldinganalog-to-digitalconverter(ADC). A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5 m CMOS technology and occupies a die area of 2 × 1.5 mm 2 . The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply. In this paper, a novel mixed-averaging distributed T/H circuit is proposed which improves the accuracy and provides a better tradeoff between accuracy, size and power dissipation. In addition, a novel bit synchronization architecture is pre- sented to reduce the number of comparators, and this architec- ture employs folding circuits to produce a bit synchronization signal. Therefore, folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchroniza- tion block. A special low-power CMOS ADC is designed and only 22 comparators are used in the whole ADC. The ADC is implemented in 0.5 m CMOS technology. Measured results show that the power dissipation of the ADC is 138 mW at a sampling rate of 125 MHz at a 5 V supply.