74 results on '"Hosoi, Takuji"'
Search Results
2. Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates
3. Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
4. Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
5. Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces
6. Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth
7. High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices
8. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
9. Backscattering X-ray imaging using Fresnel zone aperture
10. Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway
11. Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces.
12. Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth.
13. Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices
14. Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma
15. Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices
16. Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET
17. Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator
18. Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature
19. Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers
20. Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices
21. Analysis of III–V oxides at high-k/InGaAs interfaces induced by metal electrodes
22. Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization
23. Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices.
24. Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling
25. Sub-nanometer-scale depth profiling of nitrogen atoms in SiO2/4H-SiC structures treated with NO annealing
26. Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality
27. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment
28. Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
29. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
30. Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
31. Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability
32. Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization
33. Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)
34. Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces
35. Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions
36. Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures
37. Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces
38. Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge
39. Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
40. La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
41. Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
42. La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks
43. Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
44. Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
45. Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
46. Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
47. Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
48. Characteristics of Pure Ge3N4Dielectric Layers Formed by High-Density Plasma Nitridation
49. Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition BasedIn situMethod
50. Formation Kinetics and Work Function Tuning of Pd2Si Fully Silicided Metal Gate
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.