1. Polarized Raman spectra of BaSi2epitaxial film grown by molecular beam epitaxy
- Author
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Yoshikazu Terai, Motoki Iinuma, Naoki Murakoso, Hiroaki Tsukamoto, Haruki Yamaguchi, and Takashi Suemasu
- Subjects
010302 applied physics ,Range (particle radiation) ,Materials science ,Physics and Astronomy (miscellaneous) ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,symbols.namesake ,X-ray Raman scattering ,0103 physical sciences ,Cluster (physics) ,symbols ,Physics::Atomic Physics ,Coherent anti-Stokes Raman spectroscopy ,0210 nano-technology ,Raman spectroscopy ,Molecular beam epitaxy - Abstract
The determination of Raman modes in the range between 280 and 500 cm−1 for a BaSi2(100) epitaxial film on a Si(001) substrate has been accomplished by polarized Raman measurements using a crystal rotation method. The six Raman lines from Si clusters in BaSi2 were observed in the range. In the analysis of their intensity changes as a function of crystal rotation angle based on the Raman tensors of the Si cluster, the six Raman internal modes of A1 (1), E (2), and F2 (3) were completely assigned to the observed Raman lines.
- Published
- 2017
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