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Your search keyword '"Hao, Rui"' showing total 22 results
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22 results on '"Hao, Rui"'

9. Operational Flexibility Evaluation of Distribution System with High-penetration Distributed Generation

Author

Xia Yanfeng, Yan Yunqiao, Lu Jun, Lu Li, and Hao Rui

Subjects
Distribution system, History, business.industry, Computer science, Distributed generation, Distributed computing, Penetration (firestop), business, Computer Science Applications, Education
Abstract

Considering the uncertainty caused by the integration of high-permeability distributed generation into the distribution system, it is necessary to evaluate and enhance the operational flexibility of the distribution system. Firstly, the connotation and characteristics of operational flexibility are introduced, and the relevant factors affecting the operational flexibility are analyzed. Considering the probability of the load scenario, the quantitative operational flexibility evaluation index is proposed. Finally, using IEEE 33 node distribution system to prove operational flexibility evaluation index is reasonable and the role of energy storage devices in improving the operational flexibility.

Published
2019

20. GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

Author

Ren Zheng-Wei, Tang Bao, Wang Guo-Wei, Niu Zhi-Chuan, Hao Rui-Ting, Xu Yingqiang, and Zhou Zhi-Qiang

Subjects
Materials science, Passivation, Infrared, business.industry, Superlattice, General Physics and Astronomy, Heterojunction, Photodiode, law.invention, Active layer, law, Quantum dot, Optoelectronics, business, Molecular beam epitaxy
Abstract

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800 x 800 mu m(2) without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05 mu m at 77K and 2.25 mu m at 300 K, the peak detectivities of the detectors are 4 x 10(9) cm.Hz(1/2)/W at 77K and 2 x 10(8) cm.Hz(1/2)/W at 300 K, respectively.

Published
2009

21. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

Author

Zhou Zhi-Qiang, Ren Zheng-Wei, Niu Zhi-Chuan, Tang Bao, Xu Yingqiang, and Hao Rui-Ting

Subjects
Crystal, Materials science, business.industry, Growth parameter, Superlattice, Surface roughness, General Physics and Astronomy, Optoelectronics, Heterojunction, business, Buffer (optical fiber), Molecular beam epitaxy
Abstract

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions.

Published
2009

22. GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy.

Author

Tang Bao, Xu Ying, Zhou Zhi, Hao Rui, Wang Guo, Ren Zheng, Wei and, and Niu Zhi

Subjects
SUPERLATTICES, GALLIUM arsenide, INDIUM compounds, INFRARED detectors, MOLECULAR beam epitaxy, QUANTUM dots
Abstract

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/8 ML InAs/GaSb SL active layer are fabricated with a pixel area of 800x800 mm2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05 mm at 77 K and 2.25 mm at 300 K, the peak detectivities of the detectors are 4 x 109 cm*Hz1/2/W at 77 K and 2 x 108 cm*Hz1/2/W at 300 K, respectively. [ABSTRACT FROM AUTHOR]

Published
2009
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