1. Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2
- Author
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Mauricio Terrones, Kursti Delello, Yu-Chuan Lin, Kehao Zhang, Roman Engel-Herbert, Hai-Tian Zhang, Joshua A. Robinson, and Zhong Lin
- Subjects
Phase transition ,Materials science ,Photoluminescence ,business.industry ,Nanotechnology ,Heterojunction ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Semiconductor ,Transition metal ,Monolayer ,Optoelectronics ,General Materials Science ,Thin film ,0210 nano-technology ,business ,Molecular beam epitaxy - Abstract
Integrating a phase transition material with two-dimensional semiconductors can provide a route towards tunable opto-electronic metamaterials. Here, we integrate monolayer transition metal dichalcogenides with vanadium dioxide (VO2) thin films grown via molecular beam epitaxy to form a 2D/3D heterostructure. Vanadium dioxide undergoes an insulator-to-metal transition at 60–70 °C, which changes the band alignment between MoS2 and VO2 from a semiconductor–insulator junction to a semiconductor–metal junction. By switching VO2 between insulating and metallic phases, the modulation of photoluminescence emission in the 2D semiconductors was observed. This study demonstrates the feasibility to combine TMDs and functional oxides to create unconventional hybrid optoelectronic properties derived from 2D semiconductors that are linked to functional properties of oxides through proximity coupling.
- Published
- 2016
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