1. Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3nanowires
- Author
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George Sarau, Vikram Kumar, Mukesh Kumar, Martin Heilmann, Silke Christiansen, and R.K. Singh
- Subjects
Materials science ,Photoluminescence ,Acoustics and Ultrasonics ,Nanowire ,Nanotechnology ,Cathodoluminescence ,Gallium nitride ,02 engineering and technology ,01 natural sciences ,chemistry.chemical_compound ,symbols.namesake ,0103 physical sciences ,Wurtzite crystal structure ,010302 applied physics ,business.industry ,Heterojunction ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,symbols ,Optoelectronics ,Nanorod ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
The effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires from β-Ga2O3 nanowires is reported in this work. High quality wurtzite GaN material showing a single c-plane phase is achieved from β-Ga2O3 nanowires having monoclinic crystal structure at a high ammonification temperature of 1050 °C. Lower ammonification temperatures such as 900 °C are also adequate for achieving coaxial GaN/Ga2O3 nanowire heterostructures, and the degree of GaN phase can be adjusted by varying the ammonification temperature. The crystalline quality of GaN/Ga2O3 nanowires improves with increasing the ammonification temperature. Resonant Raman spectra of GaN/Ga2O3 nanowires show Raman progression through multiple longitudinal-optical-phonon modes with overtones of up to second order. The development and improvement of the emission peak toward the near band edge of GaN at different ammonification temperatures were investigated using cathodoluminescence and photoluminescence characterization.
- Published
- 2016