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We investigate the effect of a phenomenological relaxation time on the magnetoplasma excitations of a 2D strip of electrons by using the scheme proposed in a previous paper. Particular attention is put on the lowest frequency mode which exhibits an "anomalous" dependence on the static magnetic field (perpendicular to the strip). We show that also the life time of the first mode has an anomalous dependence on the wavevector parallel to the strip and on the magnetic field.

The theory of the electronic states of crystals containing point defects in small concentration is reviewed and its application to the case of semiconductors is discussed. The basic properties of scattering and resonant and bound states are related to the band structure of the semiconductor. The form of the impurity potentials and the effect of the dielectric screening and deep levels are also discussed. Applications to the cases of donor acceptor and isoelectronic impurities are described, making use of the effective mass approximation and taking into account interband mixing and central cell corrections. Existing calculations are reviewed and compared with some of the experimentally known levels. Optical processes involving transitions between all types of electronic levels are described and experimental evidence for them is reported. Effects of external perturbations like uniaxial pressure, electric and magnetic fields are finally examined.

A single-particle Hamiltonian approach is used for describing dynamical screening of excitons in optically excited semiconductors. Upon considering a particular electron-hole pair, the excitation spectrum of all the other electrons and holes is replaced by a single plasmon mode omega (q). From a Frohlich-type Hamiltonian, 1s exciton binding energy and wavefunctions are calculated variationally with a generalization of the Lee-Low-Pines transformation. The advantage of the method, beside the simplicity, is that bandgap renormalization is accounted for within the same Hamiltonian so that a consistent comparison with experimental data is possible. In particular, our model reproduces both the remarkable persistence of the 1s GaAs exciton line under strong optical excitation and the measured transition density from bound to unbound states.