180 results on '"Foxon, C. T."'
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2. Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
3. Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
4. Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties
5. Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
6. Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy
7. Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride
8. Composition and optical properties of dilute-Sb GaN1−xSbxhighly mismatched alloys grown by MBE
9. Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy
10. Indium Nitride and Indium Gallium Nitride layers grown on nanorods
11. Electronic energy levels, wavefunctions and potential landscape of nanostructures probed by magneto-tunnelling spectroscopy
12. TEM of Nano-LEDs made by laser writing
13. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
14. GaN devices based on nanorods
15. Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy
16. Independent determination of In and N concentrations in GaInNAs alloys
17. Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics
18. Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
19. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
20. Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
21. Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates
22. Raman scattering study of undoped and As-doped GaN grown with different III/V ratios
23. Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material
24. Determination of the Mn concentration in GaMnAs
25. P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy
26. Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy
27. The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
28. Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system in a magnetic field
29. A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride
30. An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
31. The implications of spontaneous polarization effects for carrier transport measurements in GaN
32. Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN
33. Optical study of the -GaN/GaAs interface properties as a function of MBE growth conditions
34. Skyrmions and composite fermions in the limit of vanishing Zeeman energy
35. Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
36. MBE growth and characterization of magnesium-doped gallium nitride
37. Searches for skyrmions in the limit of zero -factor
38. Photoluminescence of MBE grown wurtzite Be-doped GaN
39. The electron mobility and compensation in n-type GaN
40. Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
41. Group III nitride semiconductors for short wavelength light-emitting devices
42. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy
43. Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
44. Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy
45. Tailored carrier escape rates in asymmetric double quantum wells
46. Observation of resonant Raman lines during the photoluminescence of doped GaN
47. Photoluminescence from GaN films grown by MBE on an substrate
48. On the dependence on the magnetic field orientation of the composite fermion effective mass
49. Microwave-assisted transport through a quantum dot
50. The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy
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