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Purpose. Development of a simple, phantom-based methodology allowing for pilot applications for the Elements TPS cranio-vascular module and clinical implementation prior to AVM treatments. Methods. A customized phantom was developed to be visible in MRI and CT images. High resolution digital subtraction angiograms (DSAs) and CT images of the phantom were acquired and imported into the Brainlab Elements treatment planning system. A clinical treatment plan with 5 arcs was generated in cranial vascular planning module and delivered to the phantom using a Varian TrueBeam STx Linac equipped with HD-MLCs and Brainlab ExacTrac imaging system for non-coplanar setup verification. The delivered dose was verified using a calibrated ionization chamber placed in the phantom. Upon verification of the TPS workflow, three patients with AVM who have been treated to date at our center using the Brainlab’s cranial vascular module for AVM are presented here for retrospective review. Results. The difference between the planed and measured dose by the ionization chamber was found to be less than 1%. Following a successful dose verification study, a clinical workflow was created. Currently, three AVM patients have been treated successfully. Clinical aspects of imaging and treatment planning consideration are presented in retrospective setting. Conclusions. Dose verification of the Brainlab Elements cranial vascular planning module for intracranial SRS treatments of AVM on Varian TrueBeam was successfully implemented using a custom-made phantom with

In this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is fabricated on a N+–Si/SiO2 substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio (I on/I off ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm 2 · V − 1 · s − 1 and 102, respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.

It is pointed out that there is a remarkable effect of wave-driven radial motion on the relaxation process, the stationary state, the wave-particle coupling mechanism and the wave-driven radial transport for the strong-wave case in a lower-hybrid current drive Tokamak.