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Synthesis and characterization of MgxZr2−xN2 (0.5 ≤ x ≤ 1.8) thin films deposited by reactive magnetron co-sputtering in nitrogen plasma is reported. Composition measurements show that nitrides with low oxygen content (less than 1%) can be formed up to x = 1.0, at which point an increase in oxygen content is observed. Up to composition of x = 1.6 the MgxZr2−xN2 thin films form in a rocksalt-derived crystal structure, as revealed by X-ray diffraction measurements. At x > 1.6 the films rapidly oxidize. The lattice constant of the stoichiometric MgZrN2 composition is a = 4.537 Å, and only small changes in lattice parameter are observed with changing composition. Electrical conductivity decreases by several orders of magnitude with increasing Mg-content. The conductivity of Mg-rich (x ≥ 1) films increases with increasing measurement temperature, indicating semiconducting character of Mg-rich MgxZr2−xN2. Optical absorption measurements of these Mg-rich samples show a clear absorption onset at 1.8 eV, also indicative of semiconducting behavior. [ABSTRACT FROM AUTHOR]