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We present a study of the efficiency of LaAlO3/SrTiO3 nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronics. [ABSTRACT FROM AUTHOR]

Superconducting c-axis-oriented Sr2RuO4 thin film has been fabricated using pulsed laser deposition. Although the superconductivity is localized, the onset critical temperature is enhanced over the bulk value. X-ray microstructural analysis of Sr2RuO4 superconducting and non-superconducting thin films suggests the existence of the localized stacking faults and an overall c-axis lattice expansion which may account for the locally enhanced superconductivity. [ABSTRACT FROM AUTHOR]

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis, which allows one to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of hybrid Josephson junctions based on semiconducting nanowires coupled with high-temperature superconductors is discussed. [ABSTRACT FROM AUTHOR]