1. Performance of silicon photomultipliers at low temperature
- Author
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M. Holik, R. Akberov, S. Nuruyev, F. Ahmadov, Yu. N. Kopatch, A. Sadigov, and G. Ahmadov
- Subjects
visible and IR photons ,Materials science ,EBCCDs ,business.industry ,Physics::Instrumentation and Detectors ,photon detectors for UV ,PIN diodes ,Si-PMTs ,CCDs ,Silicon photomultiplier ,EMCCDs ,cryogenic detectors ,G-APDs ,APDs ,Optoelectronics ,business ,CMOS imagers ,Instrumentation ,Mathematical Physics - Abstract
The performances of silicon photomultipliers with different structures are investigated at low temperature.The first sample is a micro pixel avalanche photodiode with deep buried pixel structure from Zecotek Photonics Inc. The second and third ones are multi-pixel photo counters with a surface pixel design from Hamamatsu Photonics. The influence of temperature on the main parameters of the photodiodes such as photon detection efficiency (PDE), gain, and capacitance was studied in the temperature range from 0C to -120C.
- Published
- 2020